NONLINEAR I-V BEHAVIOUR & THERMOELECTRIC MEASUREMENTS IN AMORPHOUS SEMICONDUCTING As-Te-I SYSTEM.

Madhavi J. Zope, J. K. Zope

Research output: Contribution to journalArticlepeer-review

Abstract

Amorphous semiconducting compound of the composition As//4//0Te//3//0I//2//0 is studied for its I-V characteristics and thermoelectric effects. It has been observed that the I-V characteristic is nonlinear in nature. This is explained on the basis of charged defect-states existing in As//5//0Te//3//0I//2//0 system. The thermoelectric power increases with increasing temperature, but at higher temperatures it is found to decrease. This is explained as due to existence of As//2Te//3 ribbons and small-polaron hopping motion of holes in the particular site geometry which is expected to occur in these ribbons. The charged defect-state model successfully explains the nonlinear I-V behavior and the thermoelectric data observed experimentally.

Original languageEnglish
Pages (from-to)68-70
Number of pages3
JournalIndian Journal of Pure and Applied Physics
Volume23
Issue number2
StatePublished - Feb 1985
Externally publishedYes

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