Abstract
Amorphous semiconducting compound of the composition As//4//0Te//3//0I//2//0 is studied for its I-V characteristics and thermoelectric effects. It has been observed that the I-V characteristic is nonlinear in nature. This is explained on the basis of charged defect-states existing in As//5//0Te//3//0I//2//0 system. The thermoelectric power increases with increasing temperature, but at higher temperatures it is found to decrease. This is explained as due to existence of As//2Te//3 ribbons and small-polaron hopping motion of holes in the particular site geometry which is expected to occur in these ribbons. The charged defect-state model successfully explains the nonlinear I-V behavior and the thermoelectric data observed experimentally.
Original language | English |
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Pages (from-to) | 68-70 |
Number of pages | 3 |
Journal | Indian Journal of Pure and Applied Physics |
Volume | 23 |
Issue number | 2 |
State | Published - Feb 1985 |
Externally published | Yes |