Abstract
In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi2Te4 on ferroelectric In2Se3 or In2Te3, where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi2Te4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.
| Original language | English |
|---|---|
| Article number | 035008 |
| Journal | 2D Materials |
| Volume | 10 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jul 2023 |
Funding
The research was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division (W L, M -H. D, F A R, M Y) for DFT calculations, and by the U.S. Department of Energy (DOE), Office of Science, National Quantum Information Science Research Centers, Quantum Science Center (M Y) for band topology analysis. This research used resources of the Oak Ridge Leadership Computing Facility at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC05-00OR22725 and the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility located at Lawrence Berkeley National Laboratory, operated under Contract No. DE-AC02-05CH11231.
| Funders | Funder number |
|---|---|
| F A R | |
| National Quantum Information Science Research Centers | |
| Quantum Science Center | DE-AC05-00OR22725 |
| U.S. Department of Energy | |
| Office of Science | |
| Basic Energy Sciences | |
| Lawrence Berkeley National Laboratory | DE-AC02-05CH11231 |
| Division of Materials Sciences and Engineering | |
| National Energy Research Scientific Computing Center |
Keywords
- MnBiTe
- heterostructure
- magnetoelectric coupling
- non-volatile memory
- topological phase transition