Noise Behavior of MOSFETs Fabricated in 0.5μm Fully-Depleted (FD) Silicon-on-Sapphire (SOS) CMOS in Weak, Moderate, and Strong Inversion

M. N. Ericson, C. L. Britton, J. M. Rochelle, B. J. Blalock, D. M. Binkley, A. L. Wintenberg, B. D. Williamson

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Fingerprint

Dive into the research topics of 'Noise Behavior of MOSFETs Fabricated in 0.5μm Fully-Depleted (FD) Silicon-on-Sapphire (SOS) CMOS in Weak, Moderate, and Strong Inversion'. Together they form a unique fingerprint.

Engineering

Material Science