NMR and short range order in amorphous silicon

W. L. Shao, J. Shinar, S. Mitra, B. C. Gerstein, F. Li, J. Fortner, J. S. Lannin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The influence of annealing on the magic angle spinning nmr spectra of sputtered a-Si has been studied. A substantial narrowing of the 29Si nmr width above 400C is observed, while a relatively small change in peak position occurs. Raman scattering and neutron diffraction measurements on this material indicate that the nmr width change is due to modifications of valence electron states with bond angle disorder.

Original languageEnglish
Pages (from-to)232-234
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

Funding

ACKNOWLEDGEMENTS Ames Laboratory is operated at Iowa State University for the US Department of Energy under contract no. W-7405-Eng-82. Portions of this work at Penn State University were supported by NSF Grant DMR 8602391.

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