Nitride-based ohmic and schottky contacts to GaN

L. F. Voss; L. Stafford; J. S. Wright; B. P. Gila; C. R. Abemathy; S. J. Pearton; F. Ren; I. I. Kravchenko

doi:10.1149/1.2731184

Nitride-based ohmic and schottky contacts to GaN

L. F. Voss
, L. Stafford
, J. S. Wright
, B. P. Gila
, C. R. Abemathy
, S. J. Pearton
, F. Ren
, I. I. Kravchenko

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Ohmic and Schottky contact formation on n-GaN using ZrN, TiN and TaN-based metallization schemes was studied. For GaN layers with an electron concentration of ∼3 × 10¹⁷ cm^-3, the minimum specific contact resistance achieved is 6 × 10^-5 Ω cm² for Ti/Al/TiN/Ti/Au after annealing at 800°C. The specific contact resistance was found to strongly depend on the doping level, suggesting that tunneling is the dominant mechanism of current flow. TiN/Pt/Au and ZrN/Pt/Au metallurgies exhibited rectifying behavior up to 900°C anneal, the maximum barrier height being ∼0.85 eV for ZrN/Pt/Au after 750°C anneal. While this value is comparable to that of standard Ni/Au and Pt/Au rectifying contacts on the same n-GaN layer, the nitride-based metallization schemes show considerable smoother surface morphologies, even after annealing in the 750-900°C range.

Original language	English
Title of host publication	ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Publisher	Electrochemical Society Inc.
Pages	191-199
Number of pages	9
Edition	2
ISBN (Electronic)	9781566775519
ISBN (Print)	9781566775519
DOIs	https://doi.org/10.1149/1.2731184
State	Published - 2007
Externally published	Yes
Event	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States Duration: May 6 2007 → May 10 2007

Publication series

Name	ECS Transactions
Number	2
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	05/6/07 → 05/10/07

Access to Document

10.1149/1.2731184

Cite this

Voss, L. F., Stafford, L., Wright, J. S., Gila, B. P., Abemathy, C. R., Pearton, S. J., Ren, F., & Kravchenko, I. I. (2007). Nitride-based ohmic and schottky contacts to GaN. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 191-199). (ECS Transactions; Vol. 6, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2731184

@inproceedings{b0b8eda4cfed4529af86412f86c199cd,

title = "Nitride-based ohmic and schottky contacts to GaN",

abstract = "Ohmic and Schottky contact formation on n-GaN using ZrN, TiN and TaN-based metallization schemes was studied. For GaN layers with an electron concentration of ∼3 × 1017 cm-3, the minimum specific contact resistance achieved is 6 × 10-5 Ω cm2 for Ti/Al/TiN/Ti/Au after annealing at 800°C. The specific contact resistance was found to strongly depend on the doping level, suggesting that tunneling is the dominant mechanism of current flow. TiN/Pt/Au and ZrN/Pt/Au metallurgies exhibited rectifying behavior up to 900°C anneal, the maximum barrier height being ∼0.85 eV for ZrN/Pt/Au after 750°C anneal. While this value is comparable to that of standard Ni/Au and Pt/Au rectifying contacts on the same n-GaN layer, the nitride-based metallization schemes show considerable smoother surface morphologies, even after annealing in the 750-900°C range.",

author = "Voss, \{L. F.\} and L. Stafford and Wright, \{J. S.\} and Gila, \{B. P.\} and Abemathy, \{C. R.\} and Pearton, \{S. J.\} and F. Ren and Kravchenko, \{I. I.\}",

year = "2007",

doi = "10.1149/1.2731184",

language = "English",

isbn = "9781566775519",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "191--199",

booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",

edition = "2",

note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

}

Voss, LF, Stafford, L, Wright, JS, Gila, BP, Abemathy, CR, Pearton, SJ, Ren, F & Kravchenko, II 2007, Nitride-based ohmic and schottky contacts to GaN. in ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 edn, ECS Transactions, no. 2, vol. 6, Electrochemical Society Inc., pp. 191-199, 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting, Chicago, IL, United States, 05/6/07. https://doi.org/10.1149/1.2731184

Nitride-based ohmic and schottky contacts to GaN. / Voss, L. F.; Stafford, L.; Wright, J. S. et al.
ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. p. 191-199 (ECS Transactions; Vol. 6, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nitride-based ohmic and schottky contacts to GaN

AU - Voss, L. F.

AU - Stafford, L.

AU - Wright, J. S.

AU - Gila, B. P.

AU - Abemathy, C. R.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

PY - 2007

Y1 - 2007

N2 - Ohmic and Schottky contact formation on n-GaN using ZrN, TiN and TaN-based metallization schemes was studied. For GaN layers with an electron concentration of ∼3 × 1017 cm-3, the minimum specific contact resistance achieved is 6 × 10-5 Ω cm2 for Ti/Al/TiN/Ti/Au after annealing at 800°C. The specific contact resistance was found to strongly depend on the doping level, suggesting that tunneling is the dominant mechanism of current flow. TiN/Pt/Au and ZrN/Pt/Au metallurgies exhibited rectifying behavior up to 900°C anneal, the maximum barrier height being ∼0.85 eV for ZrN/Pt/Au after 750°C anneal. While this value is comparable to that of standard Ni/Au and Pt/Au rectifying contacts on the same n-GaN layer, the nitride-based metallization schemes show considerable smoother surface morphologies, even after annealing in the 750-900°C range.

AB - Ohmic and Schottky contact formation on n-GaN using ZrN, TiN and TaN-based metallization schemes was studied. For GaN layers with an electron concentration of ∼3 × 1017 cm-3, the minimum specific contact resistance achieved is 6 × 10-5 Ω cm2 for Ti/Al/TiN/Ti/Au after annealing at 800°C. The specific contact resistance was found to strongly depend on the doping level, suggesting that tunneling is the dominant mechanism of current flow. TiN/Pt/Au and ZrN/Pt/Au metallurgies exhibited rectifying behavior up to 900°C anneal, the maximum barrier height being ∼0.85 eV for ZrN/Pt/Au after 750°C anneal. While this value is comparable to that of standard Ni/Au and Pt/Au rectifying contacts on the same n-GaN layer, the nitride-based metallization schemes show considerable smoother surface morphologies, even after annealing in the 750-900°C range.

UR - https://www.scopus.com/pages/publications/45749091739

U2 - 10.1149/1.2731184

DO - 10.1149/1.2731184

M3 - Conference contribution

AN - SCOPUS:45749091739

SN - 9781566775519

T3 - ECS Transactions

SP - 191

EP - 199

BT - ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface

PB - Electrochemical Society Inc.

T2 - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

ER -

Voss LF, Stafford L, Wright JS, Gila BP, Abemathy CR, Pearton SJ et al. Nitride-based ohmic and schottky contacts to GaN. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 ed. Electrochemical Society Inc. 2007. p. 191-199. (ECS Transactions; 2). doi: 10.1149/1.2731184

Nitride-based ohmic and schottky contacts to GaN

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