@inproceedings{b0b8eda4cfed4529af86412f86c199cd,
title = "Nitride-based ohmic and schottky contacts to GaN",
abstract = "Ohmic and Schottky contact formation on n-GaN using ZrN, TiN and TaN-based metallization schemes was studied. For GaN layers with an electron concentration of ∼3 × 1017 cm-3, the minimum specific contact resistance achieved is 6 × 10-5 Ω cm2 for Ti/Al/TiN/Ti/Au after annealing at 800°C. The specific contact resistance was found to strongly depend on the doping level, suggesting that tunneling is the dominant mechanism of current flow. TiN/Pt/Au and ZrN/Pt/Au metallurgies exhibited rectifying behavior up to 900°C anneal, the maximum barrier height being ∼0.85 eV for ZrN/Pt/Au after 750°C anneal. While this value is comparable to that of standard Ni/Au and Pt/Au rectifying contacts on the same n-GaN layer, the nitride-based metallization schemes show considerable smoother surface morphologies, even after annealing in the 750-900°C range.",
author = "Voss, {L. F.} and L. Stafford and Wright, {J. S.} and Gila, {B. P.} and Abemathy, {C. R.} and Pearton, {S. J.} and F. Ren and Kravchenko, {I. I.}",
year = "2007",
doi = "10.1149/1.2731184",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "191--199",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}