Next-generation electronics by co-design with chalcogenide materials

Debarghya Mallick; Sujoy Ghosh; An Hsi Chen; Jian Liao; Jinkyoung Yoo; Qiangsheng Lu; Steven J. Randolph; Scott T. Retterer; Gyula Eres; Yong P. Chen; Leonid P. Rokhinson; Matthew Brahlek; Robert G. Moore

doi:10.1038/s44306-025-00106-y

Next-generation electronics by co-design with chalcogenide materials

Debarghya Mallick
, Sujoy Ghosh
, An Hsi Chen
, Jian Liao
, Jinkyoung Yoo
, Qiangsheng Lu
, Steven J. Randolph
, Scott T. Retterer
, Gyula Eres
, Yong P. Chen
, Leonid P. Rokhinson
, Matthew Brahlek
, Robert G. Moore

Research output: Contribution to journal › Review article › peer-review

Abstract

As Moore’s law approaches its limits, chalcogenides offer a promising route to next-generation computing and sensing, thanks to their topological, magnetoelectric, excitonic, and spintronic properties. Yet the same traits that make them appealing, e.g., exotic properties at monolayer thickness, clean van der Waals interfaces, and strong many-body effects, also heighten sensitivity to fabrication, hindering translation into scalable devices. Progress is further constrained by fragmented knowledge across synthesis, processing, and integration, and by the lack of systematic links between fabrication parameters and performance metrics. This Perspective examines key obstacles in controlling chalcogenide heterostructures and stresses the need for an integrated co-design framework, uniting materials growth, processing, and device architecture to accelerate practical technologies.

Original language	English
Article number	41
Journal	npj Spintronics
Volume	3
Issue number	1
DOIs	https://doi.org/10.1038/s44306-025-00106-y
State	Published - Dec 2025

Funding

This material is based upon work supported by the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center. S.T.R., S.J.R., and S.G. are supported by the Center for Nanophase Materials Sciences, which is a Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. A. -S. C. was supported by the U. S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), Materials Sciences and Engineering Division. This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC0500OR22725 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan).

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@article{dbbc2f0bc94144fcae180407aac0c72c,

title = "Next-generation electronics by co-design with chalcogenide materials",

abstract = "As Moore{\textquoteright}s law approaches its limits, chalcogenides offer a promising route to next-generation computing and sensing, thanks to their topological, magnetoelectric, excitonic, and spintronic properties. Yet the same traits that make them appealing, e.g., exotic properties at monolayer thickness, clean van der Waals interfaces, and strong many-body effects, also heighten sensitivity to fabrication, hindering translation into scalable devices. Progress is further constrained by fragmented knowledge across synthesis, processing, and integration, and by the lack of systematic links between fabrication parameters and performance metrics. This Perspective examines key obstacles in controlling chalcogenide heterostructures and stresses the need for an integrated co-design framework, uniting materials growth, processing, and device architecture to accelerate practical technologies.",

author = "Debarghya Mallick and Sujoy Ghosh and Chen, \{An Hsi\} and Jian Liao and Jinkyoung Yoo and Qiangsheng Lu and Randolph, \{Steven J.\} and Retterer, \{Scott T.\} and Gyula Eres and Chen, \{Yong P.\} and Rokhinson, \{Leonid P.\} and Matthew Brahlek and Moore, \{Robert G.\}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2025.",

year = "2025",

month = dec,

doi = "10.1038/s44306-025-00106-y",

language = "English",

volume = "3",

journal = "npj Spintronics",

issn = "2948-2119",

publisher = "Nature Research",

number = "1",

}

TY - JOUR

T1 - Next-generation electronics by co-design with chalcogenide materials

AU - Mallick, Debarghya

AU - Ghosh, Sujoy

AU - Chen, An Hsi

AU - Liao, Jian

AU - Yoo, Jinkyoung

AU - Lu, Qiangsheng

AU - Randolph, Steven J.

AU - Retterer, Scott T.

AU - Eres, Gyula

AU - Chen, Yong P.

AU - Rokhinson, Leonid P.

AU - Brahlek, Matthew

AU - Moore, Robert G.

PY - 2025/12

Y1 - 2025/12

N2 - As Moore’s law approaches its limits, chalcogenides offer a promising route to next-generation computing and sensing, thanks to their topological, magnetoelectric, excitonic, and spintronic properties. Yet the same traits that make them appealing, e.g., exotic properties at monolayer thickness, clean van der Waals interfaces, and strong many-body effects, also heighten sensitivity to fabrication, hindering translation into scalable devices. Progress is further constrained by fragmented knowledge across synthesis, processing, and integration, and by the lack of systematic links between fabrication parameters and performance metrics. This Perspective examines key obstacles in controlling chalcogenide heterostructures and stresses the need for an integrated co-design framework, uniting materials growth, processing, and device architecture to accelerate practical technologies.

AB - As Moore’s law approaches its limits, chalcogenides offer a promising route to next-generation computing and sensing, thanks to their topological, magnetoelectric, excitonic, and spintronic properties. Yet the same traits that make them appealing, e.g., exotic properties at monolayer thickness, clean van der Waals interfaces, and strong many-body effects, also heighten sensitivity to fabrication, hindering translation into scalable devices. Progress is further constrained by fragmented knowledge across synthesis, processing, and integration, and by the lack of systematic links between fabrication parameters and performance metrics. This Perspective examines key obstacles in controlling chalcogenide heterostructures and stresses the need for an integrated co-design framework, uniting materials growth, processing, and device architecture to accelerate practical technologies.

UR - https://www.scopus.com/pages/publications/105018607824

U2 - 10.1038/s44306-025-00106-y

DO - 10.1038/s44306-025-00106-y

M3 - Review article

AN - SCOPUS:105018607824

SN - 2948-2119

VL - 3

JO - npj Spintronics

JF - npj Spintronics

IS - 1

M1 - 41

ER -

Next-generation electronics by co-design with chalcogenide materials

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