New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition

K. M. Chen; D. E. Jesson; S. J. Pennycook; T. Thundat; R. J. Warmack

doi:10.1116/1.588899

New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition

K. M. Chen, D. E. Jesson, S. J. Pennycook, T. Thundat, R. J. Warmack

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have systematically investigated the morphological evolution of Ge_0.5Si_0.5 strained films during postdeposition annealing. The changes of the surface structure are found to follow the kinetic route of strain relaxation at different stages. A number of interesting features are revealed, which include the existence of an energy barrier to the two-dimensional/three-dimensional (2D/3D) transition, and a self-limiting effect in the growth kinetics of strained 3D islands. We demonstrate that the annealing approach provides a new way to grow coherent islands with uniform size.

Original language	English
Pages (from-to)	2199-2202
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	3
DOIs	https://doi.org/10.1116/1.588899
State	Published - 1996

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abstract = "We have systematically investigated the morphological evolution of Ge0.5Si0.5 strained films during postdeposition annealing. The changes of the surface structure are found to follow the kinetic route of strain relaxation at different stages. A number of interesting features are revealed, which include the existence of an energy barrier to the two-dimensional/three-dimensional (2D/3D) transition, and a self-limiting effect in the growth kinetics of strained 3D islands. We demonstrate that the annealing approach provides a new way to grow coherent islands with uniform size.",

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AU - Jesson, D. E.

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AU - Thundat, T.

AU - Warmack, R. J.

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AB - We have systematically investigated the morphological evolution of Ge0.5Si0.5 strained films during postdeposition annealing. The changes of the surface structure are found to follow the kinetic route of strain relaxation at different stages. A number of interesting features are revealed, which include the existence of an energy barrier to the two-dimensional/three-dimensional (2D/3D) transition, and a self-limiting effect in the growth kinetics of strained 3D islands. We demonstrate that the annealing approach provides a new way to grow coherent islands with uniform size.

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ER -

New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition

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