New experimental technique of photoelectron holography applied to Bi trimers on Si(111)

J. M. Roesler, M. T. Sieger, T. Miller, T. C. Chiang

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Abstract

The branching ratio, the photoemission intensity ratio of two spin-orbit-split components, has been applied for the first time as a means for obtaining a photoelectron holographic image. Angle-resolved photoemission from a monolayer of Bi adsorbed on Si(111) shows fine-structure oscillations in the branching ratio of the Bi 5d core level due to diffraction effects. These oscillations as a function of photon energy are recorded for a number of emission angles. Three-dimensional holographic inversion of the data yields an atomic image which shows that the Bi adatoms are arranged in a trimer structure.

Original languageEnglish
Pages (from-to)L485-L490
JournalSurface Science
Volume380
Issue number2-3
DOIs
StatePublished - May 15 1997

Funding

This work was supportedb y the US Department of Energy (Division of Materials Sciences, Office of Basic Energy Sciencest Grant No. DEFG02-91ER45439T.h e SynchrotroRn adiation Centero f the Universityo f Wisconsin--Madisoisn supportebdy the US NationalS cienceF oundation Grant No. DMR-92-12658. Acknowledgement is also made to the Donors of the Petroleum ResearchF und, administeredb y the American ChemicaSl ocietya, nd to the US NationalS cience Foundation Grants Nos. DMR 95-31809a nd 95-31582fo r partialp ersonnealn de quipmenstu p-port in connectiown ith the synchrotrobne amline operation.

Keywords

  • Angle resolved photoemission
  • Bismuth
  • Photoelectron holography
  • Silicon
  • Single crystal surfaces
  • Soft X-ray photoelectron spectroscopy (using synchrotron radiation)
  • Surface structure, morphology, roughness, and topography

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