New experimental technique of photoelectron holography applied to Bi trimers on Si(111)

J. M. Roesler, M. T. Sieger, T. Miller, T. C. Chiang

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12 Scopus citations

Abstract

The branching ratio, the photoemission intensity ratio of two spin-orbit-split components, has been applied for the first time as a means for obtaining a photoelectron holographic image. Angle-resolved photoemission from a monolayer of Bi adsorbed on Si(111) shows fine-structure oscillations in the branching ratio of the Bi 5d core level due to diffraction effects. These oscillations as a function of photon energy are recorded for a number of emission angles. Three-dimensional holographic inversion of the data yields an atomic image which shows that the Bi adatoms are arranged in a trimer structure.

Original languageEnglish
Pages (from-to)L485-L490
JournalSurface Science
Volume380
Issue number2-3
DOIs
StatePublished - May 15 1997
Externally publishedYes

Funding

This work was supportedb y the US Department of Energy (Division of Materials Sciences, Office of Basic Energy Sciencest Grant No. DEFG02-91ER45439T.h e SynchrotroRn adiation Centero f the Universityo f Wisconsin--Madisoisn supportebdy the US NationalS cienceF oundation Grant No. DMR-92-12658. Acknowledgement is also made to the Donors of the Petroleum ResearchF und, administeredb y the American ChemicaSl ocietya, nd to the US NationalS cience Foundation Grants Nos. DMR 95-31809a nd 95-31582fo r partialp ersonnealn de quipmenstu p-port in connectiown ith the synchrotrobne amline operation.

FundersFunder number
American ChemicaSl ocietya
Office of Basic Energy Sciencest
US Department of Energy
US NationalS cience Foundation
US NationalS cienceF oundation
Division of Materials Sciences and Engineering

    Keywords

    • Angle resolved photoemission
    • Bismuth
    • Photoelectron holography
    • Silicon
    • Single crystal surfaces
    • Soft X-ray photoelectron spectroscopy (using synchrotron radiation)
    • Surface structure, morphology, roughness, and topography

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