Neutron transmutation of 10B doped diamond

K. Jagannadham; M. L. Reed; M. J. Lance; T. R. Watkins; K. Verghese; J. E. Butler; A. Smirnov

doi:10.1016/j.diamond.2006.03.019

Neutron transmutation of ¹⁰B doped diamond

K. Jagannadham, M. L. Reed, M. J. Lance, T. R. Watkins, K. Verghese, J. E. Butler, A. Smirnov

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Free standing ¹⁰B isotope doped diamond films deposited by chemical vapor deposition in a microwave chamber were irradiated to thermal neutron fluence values of 0.32 × 10¹⁹, 0.65 × 10¹⁹, 1.3 × 10¹⁹, and 2.6 × 10¹⁹ n/cm². Cooling of the diamond films was maintained during irradiation. In a separate experiment, neutron irradiation to a total fluence of 2.4 × 10²⁰ n/cm² with equal fast and thermal neutrons was also performed on a diamond epilayer without cooling during irradiation. The formation of defects in the diamond films was characterized using Raman, FTIR, photoluminescence, electron paramagnetic resonance spectroscopy, and X-ray diffraction. It was found that defect configurations in diamond responsible for an increase in continuum background in the one-phonon region of Raman spectrum were absent in the films that have been cooled. The FTIR peak at 1530 cm^{- 1} annealed in the sample irradiated to a fluence of 2.6 × 10¹⁹ n/cm² indicating that the sample reached a temperature of 300 °C during irradiation. Absence of characteristic infrared absorption peaks that were observed only upon annealing neutron irradiated diamond is used to conclude that the temperature of the sample during neutron irradiation to a fluence of 2.6 × 10¹⁹ n/cm² was well below 650 °C needed for mobility of defects and accumulation of stable unrecoverable damage. On the other hand, results from diamond epilayer subjected to equal thermal and fast neutron fluence of 2.4 × 10²⁰ n/cm² and without cooling showed that defects formed from displaced carbon atoms became mobile and formed complex configurations of irrecoverable damage. Electrical conductance of the unirradiated and irradiated diamond samples was measured as a function of temperature to determine the compensation of the p-type by the n-type charge carriers.

Original language	English
Pages (from-to)	50-62
Number of pages	13
Journal	Diamond and Related Materials
Volume	16
Issue number	1
DOIs	https://doi.org/10.1016/j.diamond.2006.03.019
State	Published - Jan 2007
Externally published	Yes

Funding

This research effort was supported by ECS Division, NSF. Part of this research is sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program, ORNL, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05-000R22725. SIMS calibration standards were prepared by ion implantation of known concentrations of boron and lithium. Ion implantation was provided by the Surface Modification and Characterization Research Center at ORNL. The authors wish to thank Mr. Steve Bilyj and Mr. Scott Lassell of NCSU Reactor Program for irradiation of the diamond samples.

Funders	Funder number
ECS Division
Office of Transportation Technologies
National Science Foundation
U.S. Department of Energy	DE-AC05-000R22725
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory

Keywords

Diamond
N-type
Neutron irradiation

Access to Document

10.1016/j.diamond.2006.03.019

Cite this

@article{9a5be86951a9452daa995c350f08d9c3,

title = "Neutron transmutation of 10B doped diamond",

abstract = "Free standing 10B isotope doped diamond films deposited by chemical vapor deposition in a microwave chamber were irradiated to thermal neutron fluence values of 0.32 × 1019, 0.65 × 1019, 1.3 × 1019, and 2.6 × 1019 n/cm2. Cooling of the diamond films was maintained during irradiation. In a separate experiment, neutron irradiation to a total fluence of 2.4 × 1020 n/cm2 with equal fast and thermal neutrons was also performed on a diamond epilayer without cooling during irradiation. The formation of defects in the diamond films was characterized using Raman, FTIR, photoluminescence, electron paramagnetic resonance spectroscopy, and X-ray diffraction. It was found that defect configurations in diamond responsible for an increase in continuum background in the one-phonon region of Raman spectrum were absent in the films that have been cooled. The FTIR peak at 1530 cm- 1 annealed in the sample irradiated to a fluence of 2.6 × 1019 n/cm2 indicating that the sample reached a temperature of 300 °C during irradiation. Absence of characteristic infrared absorption peaks that were observed only upon annealing neutron irradiated diamond is used to conclude that the temperature of the sample during neutron irradiation to a fluence of 2.6 × 1019 n/cm2 was well below 650 °C needed for mobility of defects and accumulation of stable unrecoverable damage. On the other hand, results from diamond epilayer subjected to equal thermal and fast neutron fluence of 2.4 × 1020 n/cm2 and without cooling showed that defects formed from displaced carbon atoms became mobile and formed complex configurations of irrecoverable damage. Electrical conductance of the unirradiated and irradiated diamond samples was measured as a function of temperature to determine the compensation of the p-type by the n-type charge carriers.",

keywords = "Diamond, N-type, Neutron irradiation",

author = "K. Jagannadham and Reed, {M. L.} and Lance, {M. J.} and Watkins, {T. R.} and K. Verghese and Butler, {J. E.} and A. Smirnov",

year = "2007",

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doi = "10.1016/j.diamond.2006.03.019",

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T1 - Neutron transmutation of 10B doped diamond

AU - Jagannadham, K.

AU - Reed, M. L.

AU - Lance, M. J.

AU - Watkins, T. R.

AU - Verghese, K.

AU - Butler, J. E.

AU - Smirnov, A.

PY - 2007/1

Y1 - 2007/1

N2 - Free standing 10B isotope doped diamond films deposited by chemical vapor deposition in a microwave chamber were irradiated to thermal neutron fluence values of 0.32 × 1019, 0.65 × 1019, 1.3 × 1019, and 2.6 × 1019 n/cm2. Cooling of the diamond films was maintained during irradiation. In a separate experiment, neutron irradiation to a total fluence of 2.4 × 1020 n/cm2 with equal fast and thermal neutrons was also performed on a diamond epilayer without cooling during irradiation. The formation of defects in the diamond films was characterized using Raman, FTIR, photoluminescence, electron paramagnetic resonance spectroscopy, and X-ray diffraction. It was found that defect configurations in diamond responsible for an increase in continuum background in the one-phonon region of Raman spectrum were absent in the films that have been cooled. The FTIR peak at 1530 cm- 1 annealed in the sample irradiated to a fluence of 2.6 × 1019 n/cm2 indicating that the sample reached a temperature of 300 °C during irradiation. Absence of characteristic infrared absorption peaks that were observed only upon annealing neutron irradiated diamond is used to conclude that the temperature of the sample during neutron irradiation to a fluence of 2.6 × 1019 n/cm2 was well below 650 °C needed for mobility of defects and accumulation of stable unrecoverable damage. On the other hand, results from diamond epilayer subjected to equal thermal and fast neutron fluence of 2.4 × 1020 n/cm2 and without cooling showed that defects formed from displaced carbon atoms became mobile and formed complex configurations of irrecoverable damage. Electrical conductance of the unirradiated and irradiated diamond samples was measured as a function of temperature to determine the compensation of the p-type by the n-type charge carriers.

AB - Free standing 10B isotope doped diamond films deposited by chemical vapor deposition in a microwave chamber were irradiated to thermal neutron fluence values of 0.32 × 1019, 0.65 × 1019, 1.3 × 1019, and 2.6 × 1019 n/cm2. Cooling of the diamond films was maintained during irradiation. In a separate experiment, neutron irradiation to a total fluence of 2.4 × 1020 n/cm2 with equal fast and thermal neutrons was also performed on a diamond epilayer without cooling during irradiation. The formation of defects in the diamond films was characterized using Raman, FTIR, photoluminescence, electron paramagnetic resonance spectroscopy, and X-ray diffraction. It was found that defect configurations in diamond responsible for an increase in continuum background in the one-phonon region of Raman spectrum were absent in the films that have been cooled. The FTIR peak at 1530 cm- 1 annealed in the sample irradiated to a fluence of 2.6 × 1019 n/cm2 indicating that the sample reached a temperature of 300 °C during irradiation. Absence of characteristic infrared absorption peaks that were observed only upon annealing neutron irradiated diamond is used to conclude that the temperature of the sample during neutron irradiation to a fluence of 2.6 × 1019 n/cm2 was well below 650 °C needed for mobility of defects and accumulation of stable unrecoverable damage. On the other hand, results from diamond epilayer subjected to equal thermal and fast neutron fluence of 2.4 × 1020 n/cm2 and without cooling showed that defects formed from displaced carbon atoms became mobile and formed complex configurations of irrecoverable damage. Electrical conductance of the unirradiated and irradiated diamond samples was measured as a function of temperature to determine the compensation of the p-type by the n-type charge carriers.

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