Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

Grace D. Metcalfe; Eric D. Readinger; Ryan Enck; Hongen Shen; Michael Wraback; Nathaniel T. Woodward; Jon Poplawsky; Volkmar Dierolf

doi:10.1364/ome.1.000078

Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

Grace D. Metcalfe
, Eric D. Readinger
, Ryan Enck
, Hongen Shen
, Michael Wraback
, Nathaniel T. Woodward
, Jon Poplawsky
, Volkmar Dierolf

Research output: Contribution to journal › Article › peer-review

Abstract

We present luminescence spectroscopy measurements of in situ Nd doped AlN grown by plasma-assisted molecular beam epitaxy. A Nd concentration as high as 0.08 at. % is incorporated into the host material. The Nd incorporation efficiency within the AlN matrix is found to be highly sensitive to the Al flux but independent of the substrate temperature (between 800 °C to 950 °C). Photoluminescence, photoluminescence excitation, and combined excitation-emission spectroscopy (CEES) spectra are used to identify the Stark sublevels of the following manifolds: ⁴I_9/2, ⁴I_11/2, ⁴I_13/2, ⁴F_3/2, ⁴F_5/2, ²H_9/2, ⁴F_7/2, ⁴S_3/2, ⁴G_5/2, and ⁴G_7/2. A main Nd incorporation site and two minority sites are identified using CEES measurements.

Original language	English
Pages (from-to)	84-90
Number of pages	7
Journal	Optical Materials Express
Volume	1
Issue number	1
DOIs	https://doi.org/10.1364/ome.1.000078
State	Published - May 2011
Externally published	Yes

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@article{cc4355bc0a0a43a197aed271d169ca77,

title = "Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy",

abstract = "We present luminescence spectroscopy measurements of in situ Nd doped AlN grown by plasma-assisted molecular beam epitaxy. A Nd concentration as high as 0.08 at. \% is incorporated into the host material. The Nd incorporation efficiency within the AlN matrix is found to be highly sensitive to the Al flux but independent of the substrate temperature (between 800 °C to 950 °C). Photoluminescence, photoluminescence excitation, and combined excitation-emission spectroscopy (CEES) spectra are used to identify the Stark sublevels of the following manifolds: 4I9/2, 4I11/2, 4I13/2, 4F3/2, 4F5/2, 2H9/2, 4F7/2, 4S3/2, 4G5/2, and 4G7/2. A main Nd incorporation site and two minority sites are identified using CEES measurements.",

author = "Metcalfe, \{Grace D.\} and Readinger, \{Eric D.\} and Ryan Enck and Hongen Shen and Michael Wraback and Woodward, \{Nathaniel T.\} and Jon Poplawsky and Volkmar Dierolf",

year = "2011",

month = may,

doi = "10.1364/ome.1.000078",

language = "English",

volume = "1",

pages = "84--90",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optica Publishing Group",

number = "1",

}

TY - JOUR

T1 - Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

AU - Metcalfe, Grace D.

AU - Readinger, Eric D.

AU - Enck, Ryan

AU - Shen, Hongen

AU - Wraback, Michael

AU - Woodward, Nathaniel T.

AU - Poplawsky, Jon

AU - Dierolf, Volkmar

PY - 2011/5

Y1 - 2011/5

N2 - We present luminescence spectroscopy measurements of in situ Nd doped AlN grown by plasma-assisted molecular beam epitaxy. A Nd concentration as high as 0.08 at. % is incorporated into the host material. The Nd incorporation efficiency within the AlN matrix is found to be highly sensitive to the Al flux but independent of the substrate temperature (between 800 °C to 950 °C). Photoluminescence, photoluminescence excitation, and combined excitation-emission spectroscopy (CEES) spectra are used to identify the Stark sublevels of the following manifolds: 4I9/2, 4I11/2, 4I13/2, 4F3/2, 4F5/2, 2H9/2, 4F7/2, 4S3/2, 4G5/2, and 4G7/2. A main Nd incorporation site and two minority sites are identified using CEES measurements.

AB - We present luminescence spectroscopy measurements of in situ Nd doped AlN grown by plasma-assisted molecular beam epitaxy. A Nd concentration as high as 0.08 at. % is incorporated into the host material. The Nd incorporation efficiency within the AlN matrix is found to be highly sensitive to the Al flux but independent of the substrate temperature (between 800 °C to 950 °C). Photoluminescence, photoluminescence excitation, and combined excitation-emission spectroscopy (CEES) spectra are used to identify the Stark sublevels of the following manifolds: 4I9/2, 4I11/2, 4I13/2, 4F3/2, 4F5/2, 2H9/2, 4F7/2, 4S3/2, 4G5/2, and 4G7/2. A main Nd incorporation site and two minority sites are identified using CEES measurements.

UR - https://www.scopus.com/pages/publications/85098181735

U2 - 10.1364/ome.1.000078

DO - 10.1364/ome.1.000078

M3 - Article

AN - SCOPUS:85098181735

SN - 2159-3930

VL - 1

SP - 84

EP - 90

JO - Optical Materials Express

JF - Optical Materials Express

IS - 1

ER -

Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

Abstract

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