Near diffraction limit high-brightness 850 nm tapered laser diodes

Ye Yang; Yun Liu; Jin Long Zhang; Zai Jin Li; Xiao Nan Shan; Li Jun Wang

doi:10.3788/fgxb20113210.1064

Near diffraction limit high-brightness 850 nm tapered laser diodes

Ye Yang, Yun Liu, Jin Long Zhang, Zai Jin Li, Xiao Nan Shan, Li Jun Wang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the beam quality of near diffraction limit has been achieved. The beam propagation factor M² is only 1.7 and the high brightness is up to 16.3 MW·cm^-2·sr^-1 when the output power is 200 mW, and the values change to 2.8 and 9.9 MW · cm^-2 · sr^-1 under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes.

Original language	English
Pages (from-to)	1064-1068
Number of pages	5
Journal	Faguang Xuebao/Chinese Journal of Luminescence
Volume	32
Issue number	10
DOIs	https://doi.org/10.3788/fgxb20113210.1064
State	Published - Oct 2011

Keywords

850 nm
High brightness
Tapered laser diode
The beam propagation factor M

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10.3788/fgxb20113210.1064

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title = "Near diffraction limit high-brightness 850 nm tapered laser diodes",

abstract = "High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the beam quality of near diffraction limit has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW, and the values change to 2.8 and 9.9 MW · cm-2 · sr-1 under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes.",

keywords = "850 nm, High brightness, Tapered laser diode, The beam propagation factor M",

author = "Ye Yang and Yun Liu and Zhang, {Jin Long} and Li, {Zai Jin} and Shan, {Xiao Nan} and Wang, {Li Jun}",

year = "2011",

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doi = "10.3788/fgxb20113210.1064",

language = "English",

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T1 - Near diffraction limit high-brightness 850 nm tapered laser diodes

AU - Yang, Ye

AU - Liu, Yun

AU - Zhang, Jin Long

AU - Li, Zai Jin

AU - Shan, Xiao Nan

AU - Wang, Li Jun

PY - 2011/10

Y1 - 2011/10

N2 - High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the beam quality of near diffraction limit has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW, and the values change to 2.8 and 9.9 MW · cm-2 · sr-1 under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes.

AB - High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the beam quality of near diffraction limit has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW, and the values change to 2.8 and 9.9 MW · cm-2 · sr-1 under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes.

KW - 850 nm

KW - High brightness

KW - Tapered laser diode

KW - The beam propagation factor M

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JO - Faguang Xuebao/Chinese Journal of Luminescence

JF - Faguang Xuebao/Chinese Journal of Luminescence

IS - 10

ER -

Near diffraction limit high-brightness 850 nm tapered laser diodes

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