Nanoscale selflating for oxide epitaxy with large symmetry mismatch

Xiang Gao; Shinbuhm Lee; John Nichols; Tricia L. Meyer; Thomas Z. Ward; Matthew F. Chisholm; Ho Nyung Lee

doi:10.1038/srep38168

Nanoscale selflating for oxide epitaxy with large symmetry mismatch

Xiang Gao, Shinbuhm Lee, John Nichols, Tricia L. Meyer, Thomas Z. Ward, Matthew F. Chisholm, Ho Nyung Lee

Quantum Heterostructures

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19 Scopus citations

Abstract

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2 (B) thin film on a perovskite SrTiO₃ (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO₂ (B) nanodomains combined with an extra (Ti,V)O₂ layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2 (B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.

Original language	English
Article number	38168
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep38168
State	Published - Dec 2 2016

Funding

This work was supported by the U.S. Department of Energy, Ofce of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. We would like to thank Qian He and Erjia Guo for helpful discussions.

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title = "Nanoscale selflating for oxide epitaxy with large symmetry mismatch",

abstract = "Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2 (B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2 (B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2 (B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.",

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AU - Gao, Xiang

AU - Lee, Shinbuhm

AU - Nichols, John

AU - Meyer, Tricia L.

AU - Ward, Thomas Z.

AU - Chisholm, Matthew F.

AU - Lee, Ho Nyung

PY - 2016/12/2

Y1 - 2016/12/2

N2 - Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2 (B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2 (B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2 (B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.

AB - Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2 (B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2 (B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2 (B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.

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Nanoscale selflating for oxide epitaxy with large symmetry mismatch

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