Nanometer-size dispersions of iron in sapphire produced by ion implantation

Carl J. McHargue; Shelly X. Ren; L. F. Allard; Y. Chen; J. Hunn; R. K. Williams; A. Perez; G. Marest

doi:10.1016/0965-9773(95)00109-3

Nanometer-size dispersions of iron in sapphire produced by ion implantation

Carl J. McHargue, Shelly X. Ren, L. F. Allard, Y. Chen, J. Hunn, R. K. Williams, A. Perez, G. Marest

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Some of the metals ions implanted into sapphire may be present as metallic colloids. In the case of 160 keV iron implanted at room temperature, the metal precipitates have diameters of 1-3 nm, are body-centered cubic and the fraction of the implanted ions present as colloids increases from 0.05 to 0.4 as the ion fluence is increased from 2 × 10¹⁶ to 1 × 10¹⁷ Fe·cm^-3. Rutherford backscattering-channeling spectroscopy, cross-section transmission electron microscopy, and conversion electron Mössbauer spectroscopy have been used to determine the lattice damage and the size and distribution of the colloids. The effects of ion fluence and post-implantation annealing in a reducing atmosphere are summarized.

Original language	English
Pages (from-to)	513-516
Number of pages	4
Journal	Nanostructured Materials
Volume	6
Issue number	1-4
DOIs	https://doi.org/10.1016/0965-9773(95)00109-3
State	Published - 1995

Funding

This research was sponsored in part by the U.S. Department of Energy, Division of Materials Sciences and the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies as part of the High Temperature Materials Laboratory User Program, under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc,

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title = "Nanometer-size dispersions of iron in sapphire produced by ion implantation",

abstract = "Some of the metals ions implanted into sapphire may be present as metallic colloids. In the case of 160 keV iron implanted at room temperature, the metal precipitates have diameters of 1-3 nm, are body-centered cubic and the fraction of the implanted ions present as colloids increases from 0.05 to 0.4 as the ion fluence is increased from 2 × 1016 to 1 × 1017 Fe·cm-3. Rutherford backscattering-channeling spectroscopy, cross-section transmission electron microscopy, and conversion electron M{\"o}ssbauer spectroscopy have been used to determine the lattice damage and the size and distribution of the colloids. The effects of ion fluence and post-implantation annealing in a reducing atmosphere are summarized.",

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AU - McHargue, Carl J.

AU - Ren, Shelly X.

AU - Allard, L. F.

AU - Chen, Y.

AU - Hunn, J.

AU - Williams, R. K.

AU - Perez, A.

AU - Marest, G.

PY - 1995

Y1 - 1995

N2 - Some of the metals ions implanted into sapphire may be present as metallic colloids. In the case of 160 keV iron implanted at room temperature, the metal precipitates have diameters of 1-3 nm, are body-centered cubic and the fraction of the implanted ions present as colloids increases from 0.05 to 0.4 as the ion fluence is increased from 2 × 1016 to 1 × 1017 Fe·cm-3. Rutherford backscattering-channeling spectroscopy, cross-section transmission electron microscopy, and conversion electron Mössbauer spectroscopy have been used to determine the lattice damage and the size and distribution of the colloids. The effects of ion fluence and post-implantation annealing in a reducing atmosphere are summarized.

AB - Some of the metals ions implanted into sapphire may be present as metallic colloids. In the case of 160 keV iron implanted at room temperature, the metal precipitates have diameters of 1-3 nm, are body-centered cubic and the fraction of the implanted ions present as colloids increases from 0.05 to 0.4 as the ion fluence is increased from 2 × 1016 to 1 × 1017 Fe·cm-3. Rutherford backscattering-channeling spectroscopy, cross-section transmission electron microscopy, and conversion electron Mössbauer spectroscopy have been used to determine the lattice damage and the size and distribution of the colloids. The effects of ion fluence and post-implantation annealing in a reducing atmosphere are summarized.

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ER -

Nanometer-size dispersions of iron in sapphire produced by ion implantation

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