Nanometer-size dispersions of iron in sapphire prepared by ion implantation and annealing

C. J. McHargue; S. X. Ren; J. D. Hunn

doi:10.1016/S0921-5093(98)00722-9

Nanometer-size dispersions of iron in sapphire prepared by ion implantation and annealing

C. J. McHargue, S. X. Ren, J. D. Hunn

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Some of the metal ions implanted into sapphire (single crystal α-Al₂O₃) are often present as metallic colloids or dispersions. Nano-composites consisting of iron particles in sapphire were prepared by implantation of 160 keV ⁵⁶Fe at room temperature. The colloids were coarsened by annealing in the temperature range of 973-1673 K in a reducing atmosphere. Rutherford backscattering-ion channeling (RBS-C) and transmission electron microscopy (TEM) were used to determine the lattice damage as well as the nature, size and distribution of the iron. A range of particle sizes and shapes can be obtained by choice of implantation and/or annealing parameters.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Materials Science and Engineering: A
Volume	253
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-5093(98)00722-9
State	Published - Sep 30 1998
Externally published	Yes

Funding

This research was supported in part by the U.S. Department of Energy, Division of Materials Sciences and the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies under contract DE-AC05-84OR21400 with Lockheed Martin Energy Systems. The ion beam studies were conducted in the Surface Modification and Characterization Facilities and the electron microscopy was conducted as part of the High Temperature Materials Laboratory User Program of Oak Ridge National Laboratory.

Funders	Funder number
Office of Energy Efficiency and Renewable Energy
U.S. Department of Energy
Division of Materials Sciences
Lockheed Martin Energy Systems
Office of Transportation Technologies	DE-AC05-84OR21400

Keywords

Ion implantation
Iron colloids
Sapphire

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10.1016/S0921-5093(98)00722-9

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abstract = "Some of the metal ions implanted into sapphire (single crystal α-Al2O3) are often present as metallic colloids or dispersions. Nano-composites consisting of iron particles in sapphire were prepared by implantation of 160 keV 56Fe at room temperature. The colloids were coarsened by annealing in the temperature range of 973-1673 K in a reducing atmosphere. Rutherford backscattering-ion channeling (RBS-C) and transmission electron microscopy (TEM) were used to determine the lattice damage as well as the nature, size and distribution of the iron. A range of particle sizes and shapes can be obtained by choice of implantation and/or annealing parameters.",

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AU - Ren, S. X.

AU - Hunn, J. D.

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N2 - Some of the metal ions implanted into sapphire (single crystal α-Al2O3) are often present as metallic colloids or dispersions. Nano-composites consisting of iron particles in sapphire were prepared by implantation of 160 keV 56Fe at room temperature. The colloids were coarsened by annealing in the temperature range of 973-1673 K in a reducing atmosphere. Rutherford backscattering-ion channeling (RBS-C) and transmission electron microscopy (TEM) were used to determine the lattice damage as well as the nature, size and distribution of the iron. A range of particle sizes and shapes can be obtained by choice of implantation and/or annealing parameters.

AB - Some of the metal ions implanted into sapphire (single crystal α-Al2O3) are often present as metallic colloids or dispersions. Nano-composites consisting of iron particles in sapphire were prepared by implantation of 160 keV 56Fe at room temperature. The colloids were coarsened by annealing in the temperature range of 973-1673 K in a reducing atmosphere. Rutherford backscattering-ion channeling (RBS-C) and transmission electron microscopy (TEM) were used to determine the lattice damage as well as the nature, size and distribution of the iron. A range of particle sizes and shapes can be obtained by choice of implantation and/or annealing parameters.

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Nanometer-size dispersions of iron in sapphire prepared by ion implantation and annealing

Abstract

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Keywords

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