Nanofabrication by direct epitaxial growth

We describe a novel, all dry approach that uses direct epitaxial growth for nanostructure fabrication. The two major requirements for achieving direct epitaxial growth are the ability to generate and to subsequently maintain and control spatial and chemical selectivity in the film growth process. The spatial selectivity is generated by patterning a surface adsorption layer on Si(100) using scanning electron beam lithography. This artificial lateral variation in surface reactivity is used as a template in subsequent epitaxy. Selective epitaxial growth on the resulting patterns is achieved by supersonic molecular jet epitaxy. Systematic investigation of the effects of various patterning and growth parameters on spatial and chemical selectivity at a sub-100-nm feature scale using hydrogen terminated and nitrogen terminated growing Si(100) surfaces are presented.