TY - GEN
T1 - Nanocrystalline silicon compacted by spark-plasma sintering
T2 - Microstructure and thermoelectric properties
AU - Schierning, G.
AU - Claudio, T.
AU - Theissmann, R.
AU - Stein, N.
AU - Petermann, N.
AU - Becker, André
AU - Denker, J.
AU - Wiggers, H.
AU - Hermann, R. P.
AU - Schmechel, R.
PY - 2010
Y1 - 2010
N2 - Nanocrystalline bulk silicon samples were fabricated using silicon nanoparticles from the gas phase, applying a spark-plasma sintering process. The mean diameter of the crystalline grains after sintering was 30 nm and smaller, the density above 97 % of that of crystalline silicon. Transmission electron microscopy showed a homogenous nanostructure. The thermal conductivity of such an n-type sample with a nominal doping level of 5×1020 cm -3 was around 11 Wm-1K-1 at room temperature. With Seebeck-coefficient α = -150 μV/K and specific conductivity σ = 290 S cm-1, the resulting efficiency ZT is approximately 0.02.
AB - Nanocrystalline bulk silicon samples were fabricated using silicon nanoparticles from the gas phase, applying a spark-plasma sintering process. The mean diameter of the crystalline grains after sintering was 30 nm and smaller, the density above 97 % of that of crystalline silicon. Transmission electron microscopy showed a homogenous nanostructure. The thermal conductivity of such an n-type sample with a nominal doping level of 5×1020 cm -3 was around 11 Wm-1K-1 at room temperature. With Seebeck-coefficient α = -150 μV/K and specific conductivity σ = 290 S cm-1, the resulting efficiency ZT is approximately 0.02.
UR - http://www.scopus.com/inward/record.url?scp=78650406931&partnerID=8YFLogxK
U2 - 10.1557/proc-1267-dd01-09
DO - 10.1557/proc-1267-dd01-09
M3 - Conference contribution
AN - SCOPUS:78650406931
SN - 9781605112442
T3 - Materials Research Society Symposium Proceedings
SP - 9
EP - 14
BT - Thermoelectric Materials 2010 - Growth, Properties, Novel Characterization Methods and Applications
PB - Materials Research Society
ER -