@inproceedings{eb6067247ef945938723c90ebbf9c39f,
title = "Nano-raman spectroscopy is reaching semiconductors",
abstract = "We have demonstrated that scanning nano-Raman spectroscopy (SNRS), also known as tip enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon-based structures at the nanoscale. Despite the disadvantages of side illumination optics, such as difficulties in optical alignment and shadowing by the tip, it has the critical advantage that it may be used for the analysis of non-transparent samples. A key criterion for making SNRS effective for imaging Si samples is the optimization of the contrast between near-field and far-field (background) Raman signals, which improves by an order of magnitude by optimizing the incident and scattering polarization scheme. The resulting nano-Raman images of semiconducting structures yield a spatial resolution ∼20nm.",
keywords = "Apertureless near-field optics, Plasmon resonance, Scanning nano-Raman spectroscopy, Scanning probe microscopy, Strained silicon, Tip-enhanced Raman",
author = "Hartschuh, {R. D.} and N. Lee and A. Kisliuk and Maguire, {J. F.} and M. Green and Foster, {M. D.} and Sokolov, {A. P.}",
year = "2007",
doi = "10.1063/1.2799435",
language = "English",
isbn = "0735404410",
series = "AIP Conference Proceedings",
pages = "549--552",
booktitle = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS",
note = "CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology ; Conference date: 27-03-2007 Through 29-03-2007",
}