Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors

Heekyeong Park, Jiyoul Lee, Gyuchull Han, Abdul Aziz AlMutairi, Young Hoon Kim, Jaichan Lee, Young Min Kim, Young Jun Kim, Youngki Yoon, Sunkook Kim

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Indirect bandgap of multilayer molybdenum disulfide has been recognized as a major hindrance to high responsivity of MoS2 phototransistors. Here, to overcome this fundamental limitation, we propose a structural engineering of MoS2 via nano-patterning using block copolymer lithography. The fabricated nanoporous MoS2, consisting of periodic hexagonal arrays of hexagon nanoholes, includes abundant edges having a zigzag configuration of atomic columns with molybdenum and sulfur atoms. These exposed zigzag edges are responsible for multiple trap states in the bandgap region, as confirmed by photo-excited charge-collection spectroscopy measurements on multilayer nanoporous MoS2 phototransistors, showing that in-gap states only near the valence band can result in a photogating effect. The effect of nano-patterning is therefore to significantly enhance the responsivity of multilayer nanoporous MoS2 phototransistors, exhibiting an ultra-high photoresponsivity of 622.2 A W−1. Our nano-patterning of MoS2 for photosensing application paves a route to structural engineering of two-dimensional materials for highly sensitive and responsive optoelectronic devices.

Original languageEnglish
Article number94
JournalCommunications Materials
Volume2
Issue number1
DOIs
StatePublished - Dec 2021
Externally publishedYes

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