Abstract
Partially ordered Fe16 N2 thin films have been fabricated on Fe (001)-buffered GaAs (001) single-crystal substrates by a facing target sputtering process. The saturation magnetization has been systematically investigated as a function of N site ordering in partially ordered Fe16 N 2 thin films, which is found to be increased monotonically with the increase in the N site ordering parameter, reaching up to 2.68 T at high ordering case. A model discussion is provided based on the partial localization of 3d electron states in this material system, which successfully rationalizes the formation of the giant saturation magnetization in chemically ordered Fe16 N2. We further demonstrate that the average magnetic moment of partially ordered Fe16 N2 sensitively depends on the special arrangement of Fe6 N clusters, which is the key to realize high magnetic moment in this material system.
| Original language | English |
|---|---|
| Article number | 092506 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 9 |
| DOIs | |
| State | Published - Feb 28 2011 |
| Externally published | Yes |
Funding
The work was partially supported by DOE, Office of Basic Energy Sciences under Contract No. DE-AC02-98CH10886, NSF MRSEC, and NNIN. Parts of this work were carried out in Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Microscopy research at HTML at ORNL was sponsored by the DOE, Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Program.
| Funders | Funder number |
|---|---|
| National Science Foundation | |
| U.S. Department of Energy | |
| Office of Energy Efficiency and Renewable Energy | |
| Basic Energy Sciences | DE-AC02-98CH10886 |
| Materials Research Science and Engineering Center, Harvard University |