Multinary light absorbing semiconductor nanocrystals with diversified electronic and optical properties

Research output: Contribution to journalArticlepeer-review

Abstract

We report multinary CuZn2ASxSe4−x semiconductor nanocrystals in a wurtzite phase, achieved via hot-injection synthesis. These nanocrystals exhibit a tunable bandgap and photoluminescence in the visible range. We employ density functional theory and virtual crystal approximation to reveal the bandgap trends influenced by the main group metals and S/Se alloying.

Original languageEnglish
Pages (from-to)3785-3792
Number of pages8
JournalNanoscale Advances
Volume6
Issue number15
DOIs
StatePublished - Jun 4 2024

Funding

This work was supported by the Intel Ohio-southwest Alliance on Semiconductors and Integrated Scalable Manufacturing (OASIS) grant, and National Science Foundation REU Award #2244146, CNM ANL user project, and CNMS ORNL user project. TEM and TRPL were performed at the Center for Nanoscale Materials (CNM), a US Department of Energy Office of Science User Facility at Argonne National Laboratory, supported by the Office of Basic Energy Sciences under contract no. DE-AC02-06CH11357. DFT calculations were conducted at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy Office of Science User Facility at Oak Ridge National Laboratory.

Fingerprint

Dive into the research topics of 'Multinary light absorbing semiconductor nanocrystals with diversified electronic and optical properties'. Together they form a unique fingerprint.

Cite this