Multilevel data storage memory using deterministic polarization control

Daesu Lee; Sang Mo Yang; Tae Heon Kim; Byung Chul Jeon; Yong Su Kim; Jong Gul Yoon; Ho Nyung Lee; Seung Hyup Baek; Chang Beom Eom; Tae Won Noh

doi:10.1002/adma.201103679

Multilevel data storage memory using deterministic polarization control

Daesu Lee, Sang Mo Yang, Tae Heon Kim, Byung Chul Jeon, Yong Su Kim, Jong Gul Yoon, Ho Nyung Lee, Seung Hyup Baek, Chang Beom Eom, Tae Won Noh

Materials Science and Technology Div

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

Original language	English
Pages (from-to)	402-406
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	3
DOIs	https://doi.org/10.1002/adma.201103679
State	Published - Jan 17 2012

Keywords

ferroelectric random access memory
ferroelectrics
multilevel systems
non-volatile memory

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10.1002/adma.201103679

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title = "Multilevel data storage memory using deterministic polarization control",

abstract = "Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.",

keywords = "ferroelectric random access memory, ferroelectrics, multilevel systems, non-volatile memory",

author = "Daesu Lee and Yang, \{Sang Mo\} and Kim, \{Tae Heon\} and Jeon, \{Byung Chul\} and Kim, \{Yong Su\} and Yoon, \{Jong Gul\} and Lee, \{Ho Nyung\} and Baek, \{Seung Hyup\} and Eom, \{Chang Beom\} and Noh, \{Tae Won\}",

year = "2012",

month = jan,

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doi = "10.1002/adma.201103679",

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volume = "24",

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journal = "Advanced Materials",

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T1 - Multilevel data storage memory using deterministic polarization control

AU - Lee, Daesu

AU - Yang, Sang Mo

AU - Kim, Tae Heon

AU - Jeon, Byung Chul

AU - Kim, Yong Su

AU - Yoon, Jong Gul

AU - Lee, Ho Nyung

AU - Baek, Seung Hyup

AU - Eom, Chang Beom

AU - Noh, Tae Won

PY - 2012/1/17

Y1 - 2012/1/17

N2 - Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

AB - Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

KW - ferroelectric random access memory

KW - ferroelectrics

KW - multilevel systems

KW - non-volatile memory

UR - https://www.scopus.com/pages/publications/84862908143

U2 - 10.1002/adma.201103679

DO - 10.1002/adma.201103679

M3 - Article

AN - SCOPUS:84862908143

SN - 0935-9648

VL - 24

SP - 402

EP - 406

JO - Advanced Materials

JF - Advanced Materials

IS - 3

ER -

Multilevel data storage memory using deterministic polarization control

Abstract

Keywords

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