Multilevel data storage memory using deterministic polarization control

Daesu Lee; Sang Mo Yang; Tae Heon Kim; Byung Chul Jeon; Yong Su Kim; Jong Gul Yoon; Ho Nyung Lee; Seung Hyup Baek; Chang Beom Eom; Tae Won Noh

doi:10.1002/adma.201103679

Multilevel data storage memory using deterministic polarization control

Daesu Lee
, Sang Mo Yang
, Tae Heon Kim
, Byung Chul Jeon
, Yong Su Kim
, Jong Gul Yoon
, Ho Nyung Lee
, Seung Hyup Baek
, Chang Beom Eom
, Tae Won Noh

Research output: Contribution to journal › Article › peer-review

146 Scopus citations

Abstract

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

Original language	English
Pages (from-to)	402-406
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	3
DOIs	https://doi.org/10.1002/adma.201103679
State	Published - Jan 17 2012

Keywords

ferroelectric random access memory
ferroelectrics
multilevel systems
non-volatile memory

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10.1002/adma.201103679

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title = "Multilevel data storage memory using deterministic polarization control",

abstract = "Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.",

keywords = "ferroelectric random access memory, ferroelectrics, multilevel systems, non-volatile memory",

author = "Daesu Lee and Yang, \{Sang Mo\} and Kim, \{Tae Heon\} and Jeon, \{Byung Chul\} and Kim, \{Yong Su\} and Yoon, \{Jong Gul\} and Lee, \{Ho Nyung\} and Baek, \{Seung Hyup\} and Eom, \{Chang Beom\} and Noh, \{Tae Won\}",

year = "2012",

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doi = "10.1002/adma.201103679",

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journal = "Advanced Materials",

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T1 - Multilevel data storage memory using deterministic polarization control

AU - Lee, Daesu

AU - Yang, Sang Mo

AU - Kim, Tae Heon

AU - Jeon, Byung Chul

AU - Kim, Yong Su

AU - Yoon, Jong Gul

AU - Lee, Ho Nyung

AU - Baek, Seung Hyup

AU - Eom, Chang Beom

AU - Noh, Tae Won

PY - 2012/1/17

Y1 - 2012/1/17

N2 - Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

AB - Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

KW - ferroelectric random access memory

KW - ferroelectrics

KW - multilevel systems

KW - non-volatile memory

UR - https://www.scopus.com/pages/publications/84862908143

U2 - 10.1002/adma.201103679

DO - 10.1002/adma.201103679

M3 - Article

AN - SCOPUS:84862908143

SN - 0935-9648

VL - 24

SP - 402

EP - 406

JO - Advanced Materials

JF - Advanced Materials

IS - 3

ER -

Multilevel data storage memory using deterministic polarization control

Abstract

Keywords

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