Morphological evolution of strained films by cooperative nucleation

D. E. Jesson; K. M. Chen; S. J. Pennycook; T. Thundat; R. J. Warmack

doi:10.1103/PhysRevLett.77.1330

Morphological evolution of strained films by cooperative nucleation

D. E. Jesson
, K. M. Chen
, S. J. Pennycook
, T. Thundat
, R. J. Warmack

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

142 Scopus citations

Abstract

We identify a new mechanism of stress driven surface morphological evolution in strained semiconductor films. Surface roughness forms by a cooperative mechanism involving the sequential nucleation of islands and pits, which is distinct from the conventional view of ripple formation as an Asaro-Tiller-Grinfeld (ATG) instability. This mechanism is operative both during annealing and growth and competes with the ATG instability as a kinetic pathway to ripple formation.

Original language	English
Pages (from-to)	1330-1333
Number of pages	4
Journal	Physical Review Letters
Volume	77
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.77.1330
State	Published - 1996

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10.1103/PhysRevLett.77.1330

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title = "Morphological evolution of strained films by cooperative nucleation",

abstract = "We identify a new mechanism of stress driven surface morphological evolution in strained semiconductor films. Surface roughness forms by a cooperative mechanism involving the sequential nucleation of islands and pits, which is distinct from the conventional view of ripple formation as an Asaro-Tiller-Grinfeld (ATG) instability. This mechanism is operative both during annealing and growth and competes with the ATG instability as a kinetic pathway to ripple formation.",

author = "Jesson, \{D. E.\} and Chen, \{K. M.\} and Pennycook, \{S. J.\} and T. Thundat and Warmack, \{R. J.\}",

year = "1996",

doi = "10.1103/PhysRevLett.77.1330",

language = "English",

volume = "77",

pages = "1330--1333",

journal = "Physical Review Letters",

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publisher = "American Physical Society",

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T1 - Morphological evolution of strained films by cooperative nucleation

AU - Jesson, D. E.

AU - Chen, K. M.

AU - Pennycook, S. J.

AU - Thundat, T.

AU - Warmack, R. J.

PY - 1996

Y1 - 1996

N2 - We identify a new mechanism of stress driven surface morphological evolution in strained semiconductor films. Surface roughness forms by a cooperative mechanism involving the sequential nucleation of islands and pits, which is distinct from the conventional view of ripple formation as an Asaro-Tiller-Grinfeld (ATG) instability. This mechanism is operative both during annealing and growth and competes with the ATG instability as a kinetic pathway to ripple formation.

AB - We identify a new mechanism of stress driven surface morphological evolution in strained semiconductor films. Surface roughness forms by a cooperative mechanism involving the sequential nucleation of islands and pits, which is distinct from the conventional view of ripple formation as an Asaro-Tiller-Grinfeld (ATG) instability. This mechanism is operative both during annealing and growth and competes with the ATG instability as a kinetic pathway to ripple formation.

UR - https://www.scopus.com/pages/publications/0345473991

U2 - 10.1103/PhysRevLett.77.1330

DO - 10.1103/PhysRevLett.77.1330

M3 - Article

AN - SCOPUS:0345473991

SN - 0031-9007

VL - 77

SP - 1330

EP - 1333

JO - Physical Review Letters

JF - Physical Review Letters

IS - 7

ER -

Morphological evolution of strained films by cooperative nucleation

Abstract

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