Molecular effect on projected range in ultralow-energy ion implantation

K. Kimura; Y. Oota; K. Nakajima; M. Suzuki; T. Aoki; J. Matsuo; A. Agarwal; B. Freer; A. Stevenson; M. Ameen

doi:10.1016/S0168-583X(03)01249-7

Molecular effect on projected range in ultralow-energy ion implantation

K. Kimura, Y. Oota, K. Nakajima, M. Suzuki, T. Aoki, J. Matsuo, A. Agarwal, B. Freer, A. Stevenson, M. Ameen

Plasma Enrichment Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Silicon wafers of (100) orientation are implanted with 3 keV As ⁺ or 6 keV As₂⁺ ions at room temperature with fluences 1 × 10¹⁴-4 × 10¹⁴ atoms cm ^-2. The depth profiles of implanted As are measured by high-resolution Rutherford backscattering spectroscopy. The observed projected range for As₂⁺ implantation is larger than that for As⁺ by several percent, showing a molecular effect on the projected range.

Original language	English
Pages (from-to)	206-210
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	211
Issue number	2
DOIs	https://doi.org/10.1016/S0168-583X(03)01249-7
State	Published - Oct 2003

Funding

We are grateful to the members of Quantum Science and Engineering Center of Kyoto University for use of the 4 MV Van de Graaff accelerator. This work was supported in part by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.

Keywords

High-resolution Rutherford backscattering spectroscopy
Molecular effect
Projected range
Ultralow-energy ion implantation

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10.1016/S0168-583X(03)01249-7

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Kimura, K., Oota, Y., Nakajima, K., Suzuki, M., Aoki, T., Matsuo, J., Agarwal, A., Freer, B., Stevenson, A., & Ameen, M. (2003). Molecular effect on projected range in ultralow-energy ion implantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 211(2), 206-210. https://doi.org/10.1016/S0168-583X(03)01249-7

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title = "Molecular effect on projected range in ultralow-energy ion implantation",

abstract = "Silicon wafers of (100) orientation are implanted with 3 keV As + or 6 keV As2+ ions at room temperature with fluences 1 × 1014-4 × 1014 atoms cm -2. The depth profiles of implanted As are measured by high-resolution Rutherford backscattering spectroscopy. The observed projected range for As2+ implantation is larger than that for As+ by several percent, showing a molecular effect on the projected range.",

keywords = "High-resolution Rutherford backscattering spectroscopy, Molecular effect, Projected range, Ultralow-energy ion implantation",

author = "K. Kimura and Y. Oota and K. Nakajima and M. Suzuki and T. Aoki and J. Matsuo and A. Agarwal and B. Freer and A. Stevenson and M. Ameen",

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Kimura, K, Oota, Y, Nakajima, K, Suzuki, M, Aoki, T, Matsuo, J, Agarwal, A, Freer, B, Stevenson, A & Ameen, M 2003, 'Molecular effect on projected range in ultralow-energy ion implantation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 211, no. 2, pp. 206-210. https://doi.org/10.1016/S0168-583X(03)01249-7

TY - JOUR

T1 - Molecular effect on projected range in ultralow-energy ion implantation

AU - Kimura, K.

AU - Oota, Y.

AU - Nakajima, K.

AU - Suzuki, M.

AU - Aoki, T.

AU - Matsuo, J.

AU - Agarwal, A.

AU - Freer, B.

AU - Stevenson, A.

AU - Ameen, M.

PY - 2003/10

Y1 - 2003/10

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AB - Silicon wafers of (100) orientation are implanted with 3 keV As + or 6 keV As2+ ions at room temperature with fluences 1 × 1014-4 × 1014 atoms cm -2. The depth profiles of implanted As are measured by high-resolution Rutherford backscattering spectroscopy. The observed projected range for As2+ implantation is larger than that for As+ by several percent, showing a molecular effect on the projected range.

KW - High-resolution Rutherford backscattering spectroscopy

KW - Molecular effect

KW - Projected range

KW - Ultralow-energy ion implantation

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 2

ER -

Molecular effect on projected range in ultralow-energy ion implantation

Abstract

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Keywords

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