Abstract
We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.
| Original language | English |
|---|---|
| Article number | 364006 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 49 |
| Issue number | 36 |
| DOIs | |
| State | Published - Aug 17 2016 |
| Externally published | Yes |
Funding
This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) and US Army Research Office under the grant W911NF-15-1-0168. XK thanks the Chinese Scholarship Council for the support. Part of the work was performed in the McGill Nanotools-Microfab facility. SEM studies were performed in the Facility for Electron Microscopy Research, McGill University. STEM investigations were performed in the Canadian Centre for Electron Microscopy, a national facility supported by NSERC, the Canada Foundation for Innovation under the MSI program, and McMaster University.
| Funders | Funder number |
|---|---|
| Army Research Office | W911NF-15-1-0168 |
| McMaster University | |
| Natural Sciences and Engineering Research Council of Canada | |
| Canada Foundation for Innovation | |
| China Scholarship Council |
Keywords
- AlN
- GaN
- LED
- laser
- nanowire
- p-doping
- quantum dot
- ultraviolet