Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

Yiping Wang; Jesse Balgley; Eli Gerber; Mason Gray; Narendra Kumar; Xiaobo Lu; Jia Qiang Yan; Arash Fereidouni; Rabindra Basnet; Seok Joon Yun; Dhavala Suri; Hikari Kitadai; Takashi Taniguchi; Kenji Watanabe; Xi Ling; Jagadeesh Moodera; Young Hee Lee; Hugh O.H. Churchill; Jin Hu; Li Yang; Eun Ah Kim; David G. Mandrus; Erik A. Henriksen; Kenneth S. Burch

doi:10.1021/acs.nanolett.0c03493

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

Yiping Wang, Jesse Balgley, Eli Gerber, Mason Gray, Narendra Kumar, Xiaobo Lu, Jia Qiang Yan, Arash Fereidouni, Rabindra Basnet, Seok Joon Yun, Dhavala Suri, Hikari Kitadai, Takashi Taniguchi, Kenji Watanabe, Xi Ling, Jagadeesh Moodera, Young Hee Lee, Hugh O.H. Churchill, Jin Hu, Li YangEun Ah Kim, David G. Mandrus, Erik A. Henriksen, Kenneth S. Burch

Correlated Electron Materials

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58 Scopus citations

Abstract

Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl3. This leads to the best-reported monolayer graphene mobilities (4900 cm2/(V s)) at these high hole densities (3 × 1013 cm-2) and yields larger charge transfer to bilayer graphene (6 × 1013 cm-2).

Original language	English
Pages (from-to)	8446-8452
Number of pages	7
Journal	Nano Letters
Volume	20
Issue number	12
DOIs	https://doi.org/10.1021/acs.nanolett.0c03493
State	Published - Dec 9 2020

Funding

Y.W. and K.S.B. are grateful for the support of the Office of Naval Research under Award number N00014-20-1-2308. J.B. and E.A.H. acknowledge support under National Science Foundation Grant DMR-1810305 and with L.Y. acknowledge support from the Institute of Materials Science and Engineering at Washington University in St. Louis. X.L. and L.Y. are supported by the National Science Foundation CAREER Grant DMR-1455346 and the Air Force Office of Scientific Research Grant FA9550-17-1-0304. D.G.M. acknowledges support from the Gordon and Betty Moore Foundation’s EPiQS Initiative, Grant GBMF9069.. Work by M.G. was supported by the National Science Foundation Grant DMR-2003343 and N.K. was supported by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences under award no. DE-SC0018675. E.-A.K. was supported by the National Science Foundation (Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)) under Cooperative Agreement No. DMR-1539918, and E.G. was supported by the Cornell Center for Materials Research with funding from the NSF MRSEC program (DMR-1719875). D.S. and J.S.M. were supported by CIQMNSF DMR-1231319, NSF Grant DMR1700137 and ONR Grant N00014-16-1-2657 and ARO grant W911NF1920041. R.B., A.F., H.C., and J.H. were supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under award no. DE-SC0019467 for CrCl growth and heterostructure fabrication. 3

Keywords

2D Atomic Crystals
Chemical Vapor Deposition
Modulation Doping
Molecular Beam Epitaxy
Quantum Oscillations
Raman
RuCl

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Wang, Y., Balgley, J., Gerber, E., Gray, M., Kumar, N., Lu, X., Yan, J. Q., Fereidouni, A., Basnet, R., Yun, S. J., Suri, D., Kitadai, H., Taniguchi, T., Watanabe, K., Ling, X., Moodera, J., Lee, Y. H., Churchill, H. O. H., Hu, J., ... Burch, K. S. (2020). Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor. Nano Letters, 20(12), 8446-8452. https://doi.org/10.1021/acs.nanolett.0c03493

@article{91de137f4ef247f2a93bba883ad5a10f,

title = "Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor",

abstract = "Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl3. This leads to the best-reported monolayer graphene mobilities (4900 cm2/(V s)) at these high hole densities (3 × 1013 cm-2) and yields larger charge transfer to bilayer graphene (6 × 1013 cm-2).",

keywords = "2D Atomic Crystals, Chemical Vapor Deposition, Modulation Doping, Molecular Beam Epitaxy, Quantum Oscillations, Raman, RuCl",

author = "Yiping Wang and Jesse Balgley and Eli Gerber and Mason Gray and Narendra Kumar and Xiaobo Lu and Yan, {Jia Qiang} and Arash Fereidouni and Rabindra Basnet and Yun, {Seok Joon} and Dhavala Suri and Hikari Kitadai and Takashi Taniguchi and Kenji Watanabe and Xi Ling and Jagadeesh Moodera and Lee, {Young Hee} and Churchill, {Hugh O.H.} and Jin Hu and Li Yang and Kim, {Eun Ah} and Mandrus, {David G.} and Henriksen, {Erik A.} and Burch, {Kenneth S.}",

note = "Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = dec,

day = "9",

doi = "10.1021/acs.nanolett.0c03493",

language = "English",

volume = "20",

pages = "8446--8452",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

Wang, Y, Balgley, J, Gerber, E, Gray, M, Kumar, N, Lu, X, Yan, JQ, Fereidouni, A, Basnet, R, Yun, SJ, Suri, D, Kitadai, H, Taniguchi, T, Watanabe, K, Ling, X, Moodera, J, Lee, YH, Churchill, HOH, Hu, J, Yang, L, Kim, EA, Mandrus, DG, Henriksen, EA & Burch, KS 2020, 'Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor', Nano Letters, vol. 20, no. 12, pp. 8446-8452. https://doi.org/10.1021/acs.nanolett.0c03493

TY - JOUR

T1 - Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

AU - Wang, Yiping

AU - Balgley, Jesse

AU - Gerber, Eli

AU - Gray, Mason

AU - Kumar, Narendra

AU - Lu, Xiaobo

AU - Yan, Jia Qiang

AU - Fereidouni, Arash

AU - Basnet, Rabindra

AU - Yun, Seok Joon

AU - Suri, Dhavala

AU - Kitadai, Hikari

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Ling, Xi

AU - Moodera, Jagadeesh

AU - Lee, Young Hee

AU - Churchill, Hugh O.H.

AU - Hu, Jin

AU - Yang, Li

AU - Kim, Eun Ah

AU - Mandrus, David G.

AU - Henriksen, Erik A.

AU - Burch, Kenneth S.

PY - 2020/12/9

Y1 - 2020/12/9

N2 - Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl3. This leads to the best-reported monolayer graphene mobilities (4900 cm2/(V s)) at these high hole densities (3 × 1013 cm-2) and yields larger charge transfer to bilayer graphene (6 × 1013 cm-2).

AB - Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl3. This leads to the best-reported monolayer graphene mobilities (4900 cm2/(V s)) at these high hole densities (3 × 1013 cm-2) and yields larger charge transfer to bilayer graphene (6 × 1013 cm-2).

KW - 2D Atomic Crystals

KW - Chemical Vapor Deposition

KW - Modulation Doping

KW - Molecular Beam Epitaxy

KW - Quantum Oscillations

KW - Raman

KW - RuCl

UR - http://www.scopus.com/inward/record.url?scp=85096550568&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.0c03493

DO - 10.1021/acs.nanolett.0c03493

M3 - Article

C2 - 33166150

AN - SCOPUS:85096550568

SN - 1530-6984

VL - 20

SP - 8446

EP - 8452

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

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