TY - JOUR
T1 - Modified Lanthanum Zirconium Oxide buffer layers for low-cost, high performance YBCO coated conductors
AU - Parans Paranthaman, M.
AU - Sathyamurthy, S.
AU - Li, Xiaoping
AU - Specht, E. D.
AU - Wee, S. H.
AU - Cantoni, C.
AU - Goyal, A.
AU - Rupich, M. W.
PY - 2010/3/1
Y1 - 2010/3/1
N2 - The pyrochlore Lanthanum Zirconium Oxide, La2Zr2O7 (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni-5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La2O3-ZrO2 system. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of LaxZr1-xOy (x = 0.2-0.6) on standard Y2O3 buffered Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2-0.6 in LaxZr1-xOy. Both CeO2 cap layers and MOD-YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, Ic of 274-292 A/cm at 77 K and self-field were achieved for MOD-YBCO films grown on LaxZr1-xOy (x = 0.4-0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD LaxZr1-xOy (x = 0.25) films were grown directly on biaxially textured Ni-3W substrates. About 3 μm thick YBCO films grown on a single MOD-LZO buffered Ni-3W substrates using pulsed laser deposition show a critical current density, Jc, of 0.55 MA/cm2 (Ic of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.
AB - The pyrochlore Lanthanum Zirconium Oxide, La2Zr2O7 (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni-5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La2O3-ZrO2 system. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of LaxZr1-xOy (x = 0.2-0.6) on standard Y2O3 buffered Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2-0.6 in LaxZr1-xOy. Both CeO2 cap layers and MOD-YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, Ic of 274-292 A/cm at 77 K and self-field were achieved for MOD-YBCO films grown on LaxZr1-xOy (x = 0.4-0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD LaxZr1-xOy (x = 0.25) films were grown directly on biaxially textured Ni-3W substrates. About 3 μm thick YBCO films grown on a single MOD-LZO buffered Ni-3W substrates using pulsed laser deposition show a critical current density, Jc, of 0.55 MA/cm2 (Ic of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.
KW - Buffer layers
KW - Sol-gel processing
KW - Thin films
KW - YBCO coated conductors
UR - http://www.scopus.com/inward/record.url?scp=77649274285&partnerID=8YFLogxK
U2 - 10.1016/j.physc.2010.02.003
DO - 10.1016/j.physc.2010.02.003
M3 - Article
AN - SCOPUS:77649274285
SN - 0921-4534
VL - 470
SP - 352
EP - 356
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
IS - 5-6
ER -