Abstract
The success of GaN-based lasers and LED devices is based on the ability to activate magnesium ions as acceptors. The initial failures in p-doping stems fro m the role of hydrogen that is present in samples grown by metal-organic chemical vapor deposition (MOCVD) which passivates the Mg ions through the formation of stable Mg-H-N complexes. The breakthrough came with the discovery that proper thermal annealing and low electron beam irradiation (LEEBI) were effective in breaking up these complexes and activating the Mg acceptors [1,2]. There is mounting evidence that hydrogen plays a simila r decisive role in the realization of electrically-pumped rare-earth based light emitters in GaN.
Original language | English |
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DOIs | |
State | Published - 2013 |
Externally published | Yes |
Event | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: May 12 2013 → May 16 2013 |
Conference
Conference | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 |
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Country/Territory | Germany |
City | Munich |
Period | 05/12/13 → 05/16/13 |