Modification of Eu incorporation sites by the dissociation of hydrogen defect complexes in Mg and Eu Co-doped gallium nitride

B. Mitchell, J. Poplawsky, Y. Fujiwara, V. Dierolf

Research output: Contribution to conferencePaperpeer-review

Abstract

The success of GaN-based lasers and LED devices is based on the ability to activate magnesium ions as acceptors. The initial failures in p-doping stems fro m the role of hydrogen that is present in samples grown by metal-organic chemical vapor deposition (MOCVD) which passivates the Mg ions through the formation of stable Mg-H-N complexes. The breakthrough came with the discovery that proper thermal annealing and low electron beam irradiation (LEEBI) were effective in breaking up these complexes and activating the Mg acceptors [1,2]. There is mounting evidence that hydrogen plays a simila r decisive role in the realization of electrically-pumped rare-earth based light emitters in GaN.

Original languageEnglish
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany
Duration: May 12 2013May 16 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
Country/TerritoryGermany
CityMunich
Period05/12/1305/16/13

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