MODELLING OF UNDERCOOLING, NUCLEATION, AND MULTIPLE PHASE FRONT FORMATION IN PULSED-LASER-MELTED AMORPHOUS SILICON.

R. F. Wood, G. A. Geist, A. D. Solomon, D. H. Lowndes, G. E. Jellison

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Time-resolved reflectivity and electrical conductivity measurements provide information about near-surface melting and suggest the presence of buried molten layers. Transmission electron micrographs show the formation of fine- and large-grained polycrystalline regions if the melt front does not penetrate through the amorphous layer. The authors carried out calculations using a computer program based on an enthalpy formulation of the heat conduction. The program provides a consistent treatment of the simultaneous formation of multiple states and phase-front propagation by allowing material in each finite difference cell to melt, undercool, nucleate, and solidify under prescribed conditions.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
PublisherMaterials Research Soc
Pages159-168
Number of pages10
ISBN (Print)0931837006
StatePublished - 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume35
ISSN (Print)0272-9172

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