@inproceedings{320e9cc0148a4274b676cc0505f63eff,
title = "Modeling electron transport in copper interconnect microstructures",
abstract = "Present efforts to minimize the resistivity of copper interconnects are discussed in terms of a comprehensive understanding of microstructure and electron scattering. A general approach for modeling resistivity that includes Monte-Carlo simulation of grain growth, first-principles modeling for grain boundary (GB) and interfacial resistivities, and a stochastic simulation for electron transport is presented. Determination of GB resistivities for Σ3 twin boundaries and Σ5 twist boundaries serve to illustrate steps in this approach.",
author = "Nicholson, {Don M.} and Sirish Namilae and Bala Radhakrishnan and Zhang, {X. G.} and Nagraj Kulkarni",
year = "2008",
language = "English",
isbn = "9781558999923",
series = "Advanced Metallization Conference (AMC)",
pages = "595--599",
booktitle = "Advanced Metallization Conference 2007, AMC 2007",
note = "24th Session of the Advanced Metallization Conference 2007, AMC 2007 ; Conference date: 22-10-2007 Through 24-10-2007",
}