Modeling and simulation of short-channel MOSFETs operating in deep weak inversion

J. M. Vann; M. C. Smith; M. L. Simpson; C. E. Thomas; M. J. Paulus; J. A. Moore; L. R. Baylor; J. M. Rochelle; D. H. Lowndes; D. B. Geohegan; G. E. Jellison; V. I. Merkulov; A. A. Puretzky; E. Voelkl

doi:10.1109/MWSCAS.1998.759426

Modeling and simulation of short-channel MOSFETs operating in deep weak inversion

J. M. Vann, M. C. Smith, M. L. Simpson, C. E. Thomas, M. J. Paulus, J. A. Moore, L. R. Baylor, J. M. Rochelle, D. H. Lowndes, D. B. Geohegan, G. E. Jellison, V. I. Merkulov, A. A. Puretzky, E. Voelkl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications has included the design of short-channel MOSFETs operating at currents as small as 100 pA. Simulation of these weakly inverted, small geometry devices required the development of appropriate model parameters. We report our method for determining BSIM model parameters for short channel devices operating in the deep subthreshold region. In addition we show our modeling results with a commercial 0.5 μm CMOS process.

Original language	English
Title of host publication	Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	24-27
Number of pages	4
ISBN (Electronic)	0818689145
DOIs	https://doi.org/10.1109/MWSCAS.1998.759426
State	Published - 1998
Event	1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998 - Notre Dame, United States Duration: Aug 9 1998 → Aug 12 1998

Publication series

Name	Midwest Symposium on Circuits and Systems
ISSN (Print)	1548-3746

Conference

Conference	1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998
Country/Territory	United States
City	Notre Dame
Period	08/9/98 → 08/12/98

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10.1109/MWSCAS.1998.759426

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Vann, J. M., Smith, M. C., Simpson, M. L., Thomas, C. E., Paulus, M. J., Moore, J. A., Baylor, L. R., Rochelle, J. M., Lowndes, D. H., Geohegan, D. B., Jellison, G. E., Merkulov, V. I., Puretzky, A. A., & Voelkl, E. (1998). Modeling and simulation of short-channel MOSFETs operating in deep weak inversion. In Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998 (pp. 24-27). (Midwest Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSCAS.1998.759426

@inproceedings{d2dbb4dd793747849ee635339b972833,

title = "Modeling and simulation of short-channel MOSFETs operating in deep weak inversion",

abstract = "As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications has included the design of short-channel MOSFETs operating at currents as small as 100 pA. Simulation of these weakly inverted, small geometry devices required the development of appropriate model parameters. We report our method for determining BSIM model parameters for short channel devices operating in the deep subthreshold region. In addition we show our modeling results with a commercial 0.5 μm CMOS process.",

author = "Vann, {J. M.} and Smith, {M. C.} and Simpson, {M. L.} and Thomas, {C. E.} and Paulus, {M. J.} and Moore, {J. A.} and Baylor, {L. R.} and Rochelle, {J. M.} and Lowndes, {D. H.} and Geohegan, {D. B.} and Jellison, {G. E.} and Merkulov, {V. I.} and Puretzky, {A. A.} and E. Voelkl",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998 ; Conference date: 09-08-1998 Through 12-08-1998",

year = "1998",

doi = "10.1109/MWSCAS.1998.759426",

language = "English",

series = "Midwest Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "24--27",

booktitle = "Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998",

}

Vann, JM, Smith, MC, Simpson, ML, Thomas, CE, Paulus, MJ, Moore, JA, Baylor, LR, Rochelle, JM, Lowndes, DH, Geohegan, DB, Jellison, GE, Merkulov, VI, Puretzky, AA & Voelkl, E 1998, Modeling and simulation of short-channel MOSFETs operating in deep weak inversion. in Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998. Midwest Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., pp. 24-27, 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998, Notre Dame, United States, 08/9/98. https://doi.org/10.1109/MWSCAS.1998.759426

Modeling and simulation of short-channel MOSFETs operating in deep weak inversion. / Vann, J. M.; Smith, M. C.; Simpson, M. L. et al.
Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 24-27 (Midwest Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Modeling and simulation of short-channel MOSFETs operating in deep weak inversion

AU - Vann, J. M.

AU - Smith, M. C.

AU - Simpson, M. L.

AU - Thomas, C. E.

AU - Paulus, M. J.

AU - Moore, J. A.

AU - Baylor, L. R.

AU - Rochelle, J. M.

AU - Lowndes, D. H.

AU - Geohegan, D. B.

AU - Jellison, G. E.

AU - Merkulov, V. I.

AU - Puretzky, A. A.

AU - Voelkl, E.

PY - 1998

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N2 - As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications has included the design of short-channel MOSFETs operating at currents as small as 100 pA. Simulation of these weakly inverted, small geometry devices required the development of appropriate model parameters. We report our method for determining BSIM model parameters for short channel devices operating in the deep subthreshold region. In addition we show our modeling results with a commercial 0.5 μm CMOS process.

AB - As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications has included the design of short-channel MOSFETs operating at currents as small as 100 pA. Simulation of these weakly inverted, small geometry devices required the development of appropriate model parameters. We report our method for determining BSIM model parameters for short channel devices operating in the deep subthreshold region. In addition we show our modeling results with a commercial 0.5 μm CMOS process.

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BT - Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998

PB - Institute of Electrical and Electronics Engineers Inc.

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Vann JM, Smith MC, Simpson ML, Thomas CE, Paulus MJ, Moore JA et al. Modeling and simulation of short-channel MOSFETs operating in deep weak inversion. In Proceedings - 1998 Midwest Symposium on Circuits and Systems, MWSCAS 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 24-27. (Midwest Symposium on Circuits and Systems). doi: 10.1109/MWSCAS.1998.759426

Modeling and simulation of short-channel MOSFETs operating in deep weak inversion

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