TY - GEN
T1 - Modeling and Analysis of Bridge-Leg Crosstalk of GaN HEMT Considering Staged Effect of Common-Source Inductance
AU - Li, Xiao
AU - Liu, Xuyang
AU - Cao, Jianyu
AU - Liu, Yushan
AU - Yuan, Haiwen
AU - Xue, Yaosuo
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Wide band-gap (WBG) field-effect power devices such as gallium nitride (GaN) devices are being widely used for a better system-level performance as a result of their figures of merit compared to counterpart silicon devices. But they could also suffer from more severe bridge-leg crosstalk issue as a result of higher switching speed and special device features. To suppress the crosstalk phenomenon of GaN-based bridge-leg configurations, modeling and theoretical analysis of crosstalk voltage are necessary. However, the superposition of two noise excitations (di/dt and dv/dt) in time domain and the nonlinearities in capacitance-voltage (C-V) of GaN HEMTs bring difficulties to its modeling and analysis. In addition, as switching speed enhanced, the influence of parasitic inductance cannot be ignored. This paper proposes an analytical model of crosstalk voltage, considering staged effect of common-source inductance. By the physical behaviors of different switching stages, the two excitations are integrated into one-the current through common-source inductor in order to simplify the analysis and bridge direct relationship between two variables. Based on that, an investigation into the impact of circuit parameters on crosstalk voltage is conducted. Besides, the nonlinear characteristic of junction capacitances is taken into account in the model. The proposed model can be applied to guide GaN device selection and PCB design. The accuracy of model and the effectiveness of analysis results are verified.
AB - Wide band-gap (WBG) field-effect power devices such as gallium nitride (GaN) devices are being widely used for a better system-level performance as a result of their figures of merit compared to counterpart silicon devices. But they could also suffer from more severe bridge-leg crosstalk issue as a result of higher switching speed and special device features. To suppress the crosstalk phenomenon of GaN-based bridge-leg configurations, modeling and theoretical analysis of crosstalk voltage are necessary. However, the superposition of two noise excitations (di/dt and dv/dt) in time domain and the nonlinearities in capacitance-voltage (C-V) of GaN HEMTs bring difficulties to its modeling and analysis. In addition, as switching speed enhanced, the influence of parasitic inductance cannot be ignored. This paper proposes an analytical model of crosstalk voltage, considering staged effect of common-source inductance. By the physical behaviors of different switching stages, the two excitations are integrated into one-the current through common-source inductor in order to simplify the analysis and bridge direct relationship between two variables. Based on that, an investigation into the impact of circuit parameters on crosstalk voltage is conducted. Besides, the nonlinear characteristic of junction capacitances is taken into account in the model. The proposed model can be applied to guide GaN device selection and PCB design. The accuracy of model and the effectiveness of analysis results are verified.
KW - GaN HEMTs
KW - analytical model
KW - common-source inductance
KW - crosstalk
KW - half-bridge circuit
UR - http://www.scopus.com/inward/record.url?scp=85144033332&partnerID=8YFLogxK
U2 - 10.1109/ECCE50734.2022.9947636
DO - 10.1109/ECCE50734.2022.9947636
M3 - Conference contribution
AN - SCOPUS:85144033332
T3 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
BT - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Y2 - 9 October 2022 through 13 October 2022
ER -