Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC

Md Hasanuzzaman; Syed K. Islam; Leon M. Tolbert; Burak Ozpineci

Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC

Md Hasanuzzaman, Syed K. Islam, Leon M. Tolbert, Burak Ozpineci

Buildings and Transportation Science Div

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Silicon-based switching devices have reached the theoretical limitations for high power and high temperature applications whereas silicon carbide (SiC) has emerged as an alternate material system to overcome the limitations and can be used in extreme environment. In this paper, a vertical DIMOS transistor structure, a switching device in 4H-SiC material system, is presented. The model takes into account various short channel effects in the DIMOS channel region as well as velocity saturation and exact device geometry in the drift region. Simulations for exact device geometry have been conducted using ATLAS device simulator. A good agreement between the ATLAS simulation and analytical model evaluation for vertical DIMOS is demonstrated. Device structure and model parameters can be adjusted to obtain an optimum device to be used in system level applications.

Original language	English
Title of host publication	Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems
Editors	K.M. Smedley
Pages	313-316
Number of pages	4
State	Published - 2003
Event	Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems - Palm Springs, CA, United States Duration: Feb 24 2003 → Feb 26 2003

Publication series

Name	Proceedings of the IASTED Multi-Conference- Power and Energy Systems
Volume	7

Conference

Conference	Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems
Country/Territory	United States
City	Palm Springs, CA
Period	02/24/03 → 02/26/03

Keywords

Model verification
Power device
SiC
Vertical DIMOS

Cite this

Hasanuzzaman, M., Islam, S. K., Tolbert, L. M., & Ozpineci, B. (2003). Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC. In K. M. Smedley (Ed.), Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems (pp. 313-316). (Proceedings of the IASTED Multi-Conference- Power and Energy Systems; Vol. 7).

@inproceedings{0672d37719654dccba7c46fceced7644,

title = "Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC",

abstract = "Silicon-based switching devices have reached the theoretical limitations for high power and high temperature applications whereas silicon carbide (SiC) has emerged as an alternate material system to overcome the limitations and can be used in extreme environment. In this paper, a vertical DIMOS transistor structure, a switching device in 4H-SiC material system, is presented. The model takes into account various short channel effects in the DIMOS channel region as well as velocity saturation and exact device geometry in the drift region. Simulations for exact device geometry have been conducted using ATLAS device simulator. A good agreement between the ATLAS simulation and analytical model evaluation for vertical DIMOS is demonstrated. Device structure and model parameters can be adjusted to obtain an optimum device to be used in system level applications.",

keywords = "Model verification, Power device, SiC, Vertical DIMOS",

author = "Md Hasanuzzaman and Islam, {Syed K.} and Tolbert, {Leon M.} and Burak Ozpineci",

year = "2003",

language = "English",

isbn = "0889863350",

series = "Proceedings of the IASTED Multi-Conference- Power and Energy Systems",

pages = "313--316",

editor = "K.M. Smedley",

booktitle = "Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems",

note = "Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems ; Conference date: 24-02-2003 Through 26-02-2003",

}

Hasanuzzaman, M, Islam, SK, Tolbert, LM & Ozpineci, B 2003, Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC. in KM Smedley (ed.), Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems. Proceedings of the IASTED Multi-Conference- Power and Energy Systems, vol. 7, pp. 313-316, Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems, Palm Springs, CA, United States, 02/24/03.

Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC. / Hasanuzzaman, Md; Islam, Syed K.; Tolbert, Leon M. et al.
Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems. ed. / K.M. Smedley. 2003. p. 313-316 (Proceedings of the IASTED Multi-Conference- Power and Energy Systems; Vol. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC

AU - Hasanuzzaman, Md

AU - Islam, Syed K.

AU - Tolbert, Leon M.

AU - Ozpineci, Burak

PY - 2003

Y1 - 2003

N2 - Silicon-based switching devices have reached the theoretical limitations for high power and high temperature applications whereas silicon carbide (SiC) has emerged as an alternate material system to overcome the limitations and can be used in extreme environment. In this paper, a vertical DIMOS transistor structure, a switching device in 4H-SiC material system, is presented. The model takes into account various short channel effects in the DIMOS channel region as well as velocity saturation and exact device geometry in the drift region. Simulations for exact device geometry have been conducted using ATLAS device simulator. A good agreement between the ATLAS simulation and analytical model evaluation for vertical DIMOS is demonstrated. Device structure and model parameters can be adjusted to obtain an optimum device to be used in system level applications.

AB - Silicon-based switching devices have reached the theoretical limitations for high power and high temperature applications whereas silicon carbide (SiC) has emerged as an alternate material system to overcome the limitations and can be used in extreme environment. In this paper, a vertical DIMOS transistor structure, a switching device in 4H-SiC material system, is presented. The model takes into account various short channel effects in the DIMOS channel region as well as velocity saturation and exact device geometry in the drift region. Simulations for exact device geometry have been conducted using ATLAS device simulator. A good agreement between the ATLAS simulation and analytical model evaluation for vertical DIMOS is demonstrated. Device structure and model parameters can be adjusted to obtain an optimum device to be used in system level applications.

KW - Model verification

KW - Power device

KW - SiC

KW - Vertical DIMOS

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T3 - Proceedings of the IASTED Multi-Conference- Power and Energy Systems

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BT - Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems

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ER -

Model simulation and verification of a vertical double implanted (DIMOS) transistor in 4H-SIC

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Publication series

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Keywords

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