MOCVD growth and characterization of (BaxSr1-x)Ti1+yO3+z thin films for high frequency devices

P. K. Baumann; D. Y. Kaufman; S. K. Streiffer; J. Im; O. Auciello; R. A. Erck; J. Giumarra; J. Zebrowski; P. Baldo; A. McCormick

MOCVD growth and characterization of (Ba_xSr_1-x)Ti_1+yO_3+z thin films for high frequency devices

P. K. Baumann
, D. Y. Kaufman
, S. K. Streiffer
, J. Im
, O. Auciello
, R. A. Erck
, J. Giumarra
, J. Zebrowski
, P. Baldo
, A. McCormick

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have investigated the structural and electrical characteristics of (Ba_xSr_1-x)Ti_1+yO_3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

Original language	English
Pages (from-to)	169-174
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	603
State	Published - 2000
Externally published	Yes
Event	Materials issues for Tunable RF and Microwave Devices - Boston, MA, USA Duration: Nov 30 1999 → Dec 2 1999

Cite this

@article{9c9e49e27e244bd99c75f5d8925342de,

title = "MOCVD growth and characterization of (BaxSr1-x)Ti1+yO3+z thin films for high frequency devices",

abstract = "We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.",

author = "Baumann, \{P. K.\} and Kaufman, \{D. Y.\} and Streiffer, \{S. K.\} and J. Im and O. Auciello and Erck, \{R. A.\} and J. Giumarra and J. Zebrowski and P. Baldo and A. McCormick",

year = "2000",

language = "English",

volume = "603",

pages = "169--174",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Materials issues for Tunable RF and Microwave Devices ; Conference date: 30-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - MOCVD growth and characterization of (BaxSr1-x)Ti1+yO3+z thin films for high frequency devices

AU - Baumann, P. K.

AU - Kaufman, D. Y.

AU - Streiffer, S. K.

AU - Im, J.

AU - Auciello, O.

AU - Erck, R. A.

AU - Giumarra, J.

AU - Zebrowski, J.

AU - Baldo, P.

AU - McCormick, A.

PY - 2000

Y1 - 2000

N2 - We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

AB - We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

UR - https://www.scopus.com/pages/publications/0033709074

M3 - Conference article

AN - SCOPUS:0033709074

SN - 0272-9172

VL - 603

SP - 169

EP - 174

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials issues for Tunable RF and Microwave Devices

Y2 - 30 November 1999 through 2 December 1999

ER -

MOCVD growth and characterization of (Ba_xSr_1-x)Ti_1+yO_3+z thin films for high frequency devices

Abstract

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