MOCVD growth and characterization of (BaxSr1-x)Ti1+yO3+z thin films for high frequency devices

P. K. Baumann; D. Y. Kaufman; S. K. Streiffer; J. Im; O. Auciello; R. A. Erck; J. Giumarra; J. Zebrowski; P. Baldo; A. McCormick

MOCVD growth and characterization of (Ba_xSr_1-x)Ti_1+yO_3+z thin films for high frequency devices

P. K. Baumann, D. Y. Kaufman, S. K. Streiffer, J. Im, O. Auciello, R. A. Erck, J. Giumarra, J. Zebrowski, P. Baldo, A. McCormick

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have investigated the structural and electrical characteristics of (Ba_xSr_1-x)Ti_1+yO_3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

Original language	English
Pages (from-to)	169-174
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	603
State	Published - 2000
Externally published	Yes
Event	Materials issues for Tunable RF and Microwave Devices - Boston, MA, USA Duration: Nov 30 1999 → Dec 2 1999

Cite this

@article{9c9e49e27e244bd99c75f5d8925342de,

title = "MOCVD growth and characterization of (BaxSr1-x)Ti1+yO3+z thin films for high frequency devices",

abstract = "We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.",

author = "Baumann, {P. K.} and Kaufman, {D. Y.} and Streiffer, {S. K.} and J. Im and O. Auciello and Erck, {R. A.} and J. Giumarra and J. Zebrowski and P. Baldo and A. McCormick",

year = "2000",

language = "English",

volume = "603",

pages = "169--174",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Materials issues for Tunable RF and Microwave Devices ; Conference date: 30-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - MOCVD growth and characterization of (BaxSr1-x)Ti1+yO3+z thin films for high frequency devices

AU - Baumann, P. K.

AU - Kaufman, D. Y.

AU - Streiffer, S. K.

AU - Im, J.

AU - Auciello, O.

AU - Erck, R. A.

AU - Giumarra, J.

AU - Zebrowski, J.

AU - Baldo, P.

AU - McCormick, A.

PY - 2000

Y1 - 2000

N2 - We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

AB - We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

UR - http://www.scopus.com/inward/record.url?scp=0033709074&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033709074

SN - 0272-9172

VL - 603

SP - 169

EP - 174

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials issues for Tunable RF and Microwave Devices

Y2 - 30 November 1999 through 2 December 1999

ER -

MOCVD growth and characterization of (Ba_xSr_1-x)Ti_1+yO_3+z thin films for high frequency devices

Abstract

Other files and links

Fingerprint

Cite this