MOCVD (BaxSr1-x)Ti1+yO3+z (BST) thin films for high frequency tunable devices

P. K. Baumann; D. Y. Kaufman; J. Im; O. Auciello; S. K. Streiffer; R. A. Erck; J. Giumarra

doi:10.1080/10584580108012895

MOCVD (Ba_xSr_1-x)Ti_1+yO_3+z (BST) thin films for high frequency tunable devices

P. K. Baumann, D. Y. Kaufman, J. Im, O. Auciello, S. K. Streiffer, R. A. Erck, J. Giumarra

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

We have investigated the structural and electrical characteristics of (Ba_xSr_1-x)Ti_1+yO_3+z (BST) thin films synthesized at 650°C on Pt/SiO₂/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700°C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

Original language	English
Pages (from-to)	255-262
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	34
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580108012895
State	Published - 2001
Externally published	Yes
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: Mar 12 2000 → Mar 15 2000

Funding

This work has been supported by the U.S. Department of Energy, BES-Material Sciences and Ofice of Transporntion Technologies, under Contract W-3 1-109-ENG-38, and by DARPA, contract # 978040.

Keywords

BST
Dielectric loss
Dielectric tunability
MOCVD

Access to Document

10.1080/10584580108012895

Cite this

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title = "MOCVD (BaxSr1-x)Ti1+yO3+z (BST) thin films for high frequency tunable devices",

abstract = "We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films synthesized at 650°C on Pt/SiO2/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700°C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.",

keywords = "BST, Dielectric loss, Dielectric tunability, MOCVD",

author = "Baumann, {P. K.} and Kaufman, {D. Y.} and J. Im and O. Auciello and Streiffer, {S. K.} and Erck, {R. A.} and J. Giumarra",

year = "2001",

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language = "English",

volume = "34",

pages = "255--262",

journal = "Integrated Ferroelectrics",

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number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

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TY - JOUR

T1 - MOCVD (BaxSr1-x)Ti1+yO3+z (BST) thin films for high frequency tunable devices

AU - Baumann, P. K.

AU - Kaufman, D. Y.

AU - Im, J.

AU - Auciello, O.

AU - Streiffer, S. K.

AU - Erck, R. A.

AU - Giumarra, J.

PY - 2001

Y1 - 2001

N2 - We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films synthesized at 650°C on Pt/SiO2/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700°C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

AB - We have investigated the structural and electrical characteristics of (BaxSr1-x)Ti1+yO3+z (BST) thin films synthesized at 650°C on Pt/SiO2/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700°C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

KW - BST

KW - Dielectric loss

KW - Dielectric tunability

KW - MOCVD

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