Mn-induced Ferromagnetic Semiconducting Behavior with Linear Negative Magnetoresistance in Sr4(Ru1−xMnx)3O10 Single Crystals

Lingyi Xing; Xin Gui; Weiwei Xie; Huibo Cao; Jiaqiang Yan; Brian C. Sales; Rongying Jin

doi:10.1038/s41598-018-31679-w

Mn-induced Ferromagnetic Semiconducting Behavior with Linear Negative Magnetoresistance in Sr₄(Ru_1−xMn_x)₃O₁₀ Single Crystals

Lingyi Xing, Xin Gui, Weiwei Xie, Huibo Cao, Jiaqiang Yan, Brian C. Sales, Rongying Jin

Research output: Contribution to journal › Article › peer-review

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Abstract

Triple-layered Sr₄Ru₃O₁₀ is a unique ferromagnet with the central RuO₆ layer behaving differently from two outer layers both crystallographically and magnetically. We report that the partial substitution of Ru by smaller Mn gives rise to modification in crystal structure, electronic and magnetic properties of Sr₄(Ru_1−xMn_x)₃O₁₀. Through the single crystal X-ray diffraction refinement, we find that (Ru/Mn)O₆ octahedral rotation is no longer detectable at x ≥ 0.23, leading to the tetragonal structure. The magnetization measurements indicate the ferromagnetic transition temperature T_C decreases from 105 K for x = 0 to 30 K for x = 0.41, with the reduced magnetic moment as well. Remarkably, Mn doping results in the change of magnetic anisotropy from the easy c axis in x = 0 to the easy ab plane seen in x = 0.34 and 0.41. Such change also removes the ab-plane metamagnetic transition observed in x = 0. Furthermore, the electrical resistivity increases with increasing x showing semiconducting behavior with Δ ~ 10 meV for x = 0.34 and 30 meV for x = 0.41. Under applied magnetic field, the magnetoresistance exhibits negative and linear field dependence in all current and field configurations. These results clearly indicate Sr₄(Ru_1−xMn_x)₃O₁₀ is a novel ferromagnetic semiconductor with exotic magnetotransport properties.

Original language	English
Article number	13330
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-31679-w
State	Published - Dec 1 2018

Funding

This material is based upon work supported by the U.S. Department of Energy under EPSCoR Grant No. DESC0016315 (LX, RJ), and Louisiana Board of Regents Research Competitiveness Subprogram (RCS) under Contract Number LEQSF(2017-20)-RD-A-08 grant for X-ray diffraction refinement (XG, WX). This research used resources at the High Flux Isotope Reactor, a DOE Office of Science User Facility operated by the Oak Ridge National Laboratory for magnetic structure refinement (HC). High-pressure floating-zone technique was employed for single crystal growth under the supervision of JY and BCS who are supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Division of Materials Sciences and Engineering.

Funders	Funder number
Louisiana Board of Regents Research Competitiveness Subprogram
US Department of Energy
U.S. Department of Energy
Office of Experimental Program to Stimulate Competitive Research	DESC0016315
Office of Science
Basic Energy Sciences
Division of Materials Sciences and Engineering
Royal College of Surgeons of England	LEQSF(2017-20)-RD-A-08

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title = "Mn-induced Ferromagnetic Semiconducting Behavior with Linear Negative Magnetoresistance in Sr4(Ru1−xMnx)3O10 Single Crystals",

abstract = "Triple-layered Sr4Ru3O10 is a unique ferromagnet with the central RuO6 layer behaving differently from two outer layers both crystallographically and magnetically. We report that the partial substitution of Ru by smaller Mn gives rise to modification in crystal structure, electronic and magnetic properties of Sr4(Ru1−xMnx)3O10. Through the single crystal X-ray diffraction refinement, we find that (Ru/Mn)O6 octahedral rotation is no longer detectable at x ≥ 0.23, leading to the tetragonal structure. The magnetization measurements indicate the ferromagnetic transition temperature TC decreases from 105 K for x = 0 to 30 K for x = 0.41, with the reduced magnetic moment as well. Remarkably, Mn doping results in the change of magnetic anisotropy from the easy c axis in x = 0 to the easy ab plane seen in x = 0.34 and 0.41. Such change also removes the ab-plane metamagnetic transition observed in x = 0. Furthermore, the electrical resistivity increases with increasing x showing semiconducting behavior with Δ ~ 10 meV for x = 0.34 and 30 meV for x = 0.41. Under applied magnetic field, the magnetoresistance exhibits negative and linear field dependence in all current and field configurations. These results clearly indicate Sr4(Ru1−xMnx)3O10 is a novel ferromagnetic semiconductor with exotic magnetotransport properties.",

author = "Lingyi Xing and Xin Gui and Weiwei Xie and Huibo Cao and Jiaqiang Yan and Sales, {Brian C.} and Rongying Jin",

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AU - Xing, Lingyi

AU - Gui, Xin

AU - Xie, Weiwei

AU - Cao, Huibo

AU - Yan, Jiaqiang

AU - Sales, Brian C.

AU - Jin, Rongying

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N2 - Triple-layered Sr4Ru3O10 is a unique ferromagnet with the central RuO6 layer behaving differently from two outer layers both crystallographically and magnetically. We report that the partial substitution of Ru by smaller Mn gives rise to modification in crystal structure, electronic and magnetic properties of Sr4(Ru1−xMnx)3O10. Through the single crystal X-ray diffraction refinement, we find that (Ru/Mn)O6 octahedral rotation is no longer detectable at x ≥ 0.23, leading to the tetragonal structure. The magnetization measurements indicate the ferromagnetic transition temperature TC decreases from 105 K for x = 0 to 30 K for x = 0.41, with the reduced magnetic moment as well. Remarkably, Mn doping results in the change of magnetic anisotropy from the easy c axis in x = 0 to the easy ab plane seen in x = 0.34 and 0.41. Such change also removes the ab-plane metamagnetic transition observed in x = 0. Furthermore, the electrical resistivity increases with increasing x showing semiconducting behavior with Δ ~ 10 meV for x = 0.34 and 30 meV for x = 0.41. Under applied magnetic field, the magnetoresistance exhibits negative and linear field dependence in all current and field configurations. These results clearly indicate Sr4(Ru1−xMnx)3O10 is a novel ferromagnetic semiconductor with exotic magnetotransport properties.

AB - Triple-layered Sr4Ru3O10 is a unique ferromagnet with the central RuO6 layer behaving differently from two outer layers both crystallographically and magnetically. We report that the partial substitution of Ru by smaller Mn gives rise to modification in crystal structure, electronic and magnetic properties of Sr4(Ru1−xMnx)3O10. Through the single crystal X-ray diffraction refinement, we find that (Ru/Mn)O6 octahedral rotation is no longer detectable at x ≥ 0.23, leading to the tetragonal structure. The magnetization measurements indicate the ferromagnetic transition temperature TC decreases from 105 K for x = 0 to 30 K for x = 0.41, with the reduced magnetic moment as well. Remarkably, Mn doping results in the change of magnetic anisotropy from the easy c axis in x = 0 to the easy ab plane seen in x = 0.34 and 0.41. Such change also removes the ab-plane metamagnetic transition observed in x = 0. Furthermore, the electrical resistivity increases with increasing x showing semiconducting behavior with Δ ~ 10 meV for x = 0.34 and 30 meV for x = 0.41. Under applied magnetic field, the magnetoresistance exhibits negative and linear field dependence in all current and field configurations. These results clearly indicate Sr4(Ru1−xMnx)3O10 is a novel ferromagnetic semiconductor with exotic magnetotransport properties.

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Mn-induced Ferromagnetic Semiconducting Behavior with Linear Negative Magnetoresistance in Sr₄(Ru_1−xMn_x)₃O₁₀ Single Crystals

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