Abstract
It has been pointed out very recently that in each (Formula presented) unit cell of the Ge(113) surface, similar to the Si(113) surface, there is a subsurface self-interstitial atom. In the present paper we have observed with scanning tunneling microscopy that such interstitial atoms of clean and well-annealed Ge(113) surfaces migrate frequently even at room temperature. The energy barrier of the migration has been determined to be (Formula presented) from the measured rate of the migration, if the migration is a simple thermally activated process and an attempt frequency of (Formula presented) is used.
| Original language | English |
|---|---|
| Pages (from-to) | 12303-12307 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 56 |
| Issue number | 19 |
| DOIs | |
| State | Published - 1997 |
| Externally published | Yes |