Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Angela Cleri; John Tomko; Kathleen Quiambao-Tomko; Mario V. Imperatore; Yanglin Zhu; J. Ryan Nolen; Joshua Nordlander; Joshua D. Caldwell; Zhiqiang Mao; Noel C. Giebink; Kyle P. Kelley; Evan L. Runnerstrom; Patrick E. Hopkins; Jon Paul Maria

doi:10.1103/PhysRevMaterials.5.035202

Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Angela Cleri, John Tomko, Kathleen Quiambao-Tomko, Mario V. Imperatore, Yanglin Zhu, J. Ryan Nolen, Joshua Nordlander, Joshua D. Caldwell, Zhiqiang Mao, Noel C. Giebink, Kyle P. Kelley, Evan L. Runnerstrom, Patrick E. Hopkins, Jon Paul Maria

Functional Atomic Force Microscopy Group

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3×1019 to 4.0×1020cm-3 and mobilities ranging from 300 to 400cm2/Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. Optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

Original language	English
Article number	035202
Journal	Physical Review Materials
Volume	5
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevMaterials.5.035202
State	Published - Mar 2021

Funding

We gratefully acknowledge support from Office of Naval Research (ONR) Grant No. N00012-18-1-2107 and Army Research Office (ARO) Grant No. W911NF-16-1-0406. We also received support from the Department of Defense (DoD) through the National Defense Science and Engineering Graduate (NDSEG) Fellowship Program. K.P.K acknowledges support from the Center for Nanophase Materials Sciences, which is a U.S. Department of Energy (DOE) Office of Science User Facility. Z.Q.M. acknowledges support from the U.S. National Science Foundation (NSF) under Grant No. DMR1707502. This work was also supported in part by the NSF I/UCRC on Multi-Functional Integrated System Technology (MIST) Center; IIP-1439644, IIP-1439680, IIP-1738752, IIP-1939009, IIP-1939050, and IIP-1939012.

Funders	Funder number
Center for Nanophase Materials Sciences
National Science Foundation	DMR1707502, IIP-1939009, IIP-1439644, IIP-1738752, IIP-1939012, IIP-1439680, IIP-1939050
U.S. Department of Defense
Office of Naval Research	N00012-18-1-2107
U.S. Department of Energy
Army Research Office	W911NF-16-1-0406
Office of Science
National Defense Science and Engineering Graduate

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10.1103/PhysRevMaterials.5.035202

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Cleri, A., Tomko, J., Quiambao-Tomko, K., Imperatore, M. V., Zhu, Y., Nolen, J. R., Nordlander, J., Caldwell, J. D., Mao, Z., Giebink, N. C., Kelley, K. P., Runnerstrom, E. L., Hopkins, P. E., & Maria, J. P. (2021). Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide. Physical Review Materials, 5(3), Article 035202. https://doi.org/10.1103/PhysRevMaterials.5.035202

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title = "Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide",

abstract = "Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3×1019 to 4.0×1020cm-3 and mobilities ranging from 300 to 400cm2/Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. Optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.",

author = "Angela Cleri and John Tomko and Kathleen Quiambao-Tomko and Imperatore, {Mario V.} and Yanglin Zhu and Nolen, {J. Ryan} and Joshua Nordlander and Caldwell, {Joshua D.} and Zhiqiang Mao and Giebink, {Noel C.} and Kelley, {Kyle P.} and Runnerstrom, {Evan L.} and Hopkins, {Patrick E.} and Maria, {Jon Paul}",

note = "Publisher Copyright: {\textcopyright} 2021 American Physical Society. US.",

year = "2021",

month = mar,

doi = "10.1103/PhysRevMaterials.5.035202",

language = "English",

volume = "5",

journal = "Physical Review Materials",

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Cleri, A, Tomko, J, Quiambao-Tomko, K, Imperatore, MV, Zhu, Y, Nolen, JR, Nordlander, J, Caldwell, JD, Mao, Z, Giebink, NC, Kelley, KP, Runnerstrom, EL, Hopkins, PE & Maria, JP 2021, 'Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide', Physical Review Materials, vol. 5, no. 3, 035202. https://doi.org/10.1103/PhysRevMaterials.5.035202

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T1 - Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

AU - Cleri, Angela

AU - Tomko, John

AU - Quiambao-Tomko, Kathleen

AU - Imperatore, Mario V.

AU - Zhu, Yanglin

AU - Nolen, J. Ryan

AU - Nordlander, Joshua

AU - Caldwell, Joshua D.

AU - Mao, Zhiqiang

AU - Giebink, Noel C.

AU - Kelley, Kyle P.

AU - Runnerstrom, Evan L.

AU - Hopkins, Patrick E.

AU - Maria, Jon Paul

PY - 2021/3

Y1 - 2021/3

N2 - Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3×1019 to 4.0×1020cm-3 and mobilities ranging from 300 to 400cm2/Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. Optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

AB - Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3×1019 to 4.0×1020cm-3 and mobilities ranging from 300 to 400cm2/Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. Optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

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ER -

Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

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