Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

R. E. Koritala; M. T. Lanagan; N. Chen; G. R. Bai; Y. Huang; S. K. Streiffer

doi:10.1557/JMR.2000.0283

Microstructure and properties of PbZr_0.6Ti_0.4O₃ and PbZrO₃ thin films deposited on template layers

R. E. Koritala, M. T. Lanagan, N. Chen, G. R. Bai, Y. Huang, S. K. Streiffer

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Polycrystalline Pb(Zr_xTi_1-x)O₃ thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 °C) on (111)Pt/Ti/SiO₂/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO₃ or TiO₂. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO₃ films on Pt/Ti/SiO₂/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

Original language	English
Pages (from-to)	1962-1971
Number of pages	10
Journal	Journal of Materials Research
Volume	15
Issue number	9
DOIs	https://doi.org/10.1557/JMR.2000.0283
State	Published - Sep 2000
Externally published	Yes

Funding

This work was supported by Argonne National Laboratory’s (ANL’s) Directed Research and Development Program, with funding from the United States Department of Energy, Basic Energy Sciences (BES)-Materials Sciences, under Contract W-31-109-ENG-38. TEM analysis was performed in the Electron Microscopy Center for Materials Research at ANL. The authors thank C.M. Foster for several helpful discussions, K.C. Goretta for a critical reading of the manuscript, and J. Giumarra for experimental assistance.

Funders	Funder number
U.S. Department of Energy
Basic Energy Sciences	W-31-109-ENG-38
Argonne National Laboratory

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title = "Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers",

abstract = "Polycrystalline Pb(ZrxTi1-x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.",

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AU - Koritala, R. E.

AU - Lanagan, M. T.

AU - Chen, N.

AU - Bai, G. R.

AU - Huang, Y.

AU - Streiffer, S. K.

PY - 2000/9

Y1 - 2000/9

N2 - Polycrystalline Pb(ZrxTi1-x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

AB - Polycrystalline Pb(ZrxTi1-x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

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Microstructure and properties of PbZr_0.6Ti_0.4O₃ and PbZrO₃ thin films deposited on template layers

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