Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

R. E. Koritala, M. T. Lanagan, N. Chen, G. R. Bai, Y. Huang, S. K. Streiffer

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Polycrystalline Pb(ZrxTi1-x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450-525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

Original languageEnglish
Pages (from-to)1962-1971
Number of pages10
JournalJournal of Materials Research
Volume15
Issue number9
DOIs
StatePublished - Sep 2000
Externally publishedYes

Funding

This work was supported by Argonne National Laboratory’s (ANL’s) Directed Research and Development Program, with funding from the United States Department of Energy, Basic Energy Sciences (BES)-Materials Sciences, under Contract W-31-109-ENG-38. TEM analysis was performed in the Electron Microscopy Center for Materials Research at ANL. The authors thank C.M. Foster for several helpful discussions, K.C. Goretta for a critical reading of the manuscript, and J. Giumarra for experimental assistance.

FundersFunder number
U.S. Department of Energy
Basic Energy SciencesW-31-109-ENG-38
Argonne National Laboratory

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