Abstract
In this paper we investigate the microstructural accommodation of nonstoichiometry in (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition. Films with three different (Ba+Sr)/Ti ratios of 49/51 (y=0.04 in the notation of the formula above), of 48/52 (y = 0.08) and of 46.5/53.5 (y=0.15), were studied. High-resolution electron microscopy is used to study the microstructure of the BST films. High-spatial resolution electron energy-loss spectroscopy (EELS) is used to reveal changes in chemistry and local atomic environment both at grain boundaries and within grains as a function of titanium excess. We find an amorphous phase at the grain boundaries and grain boundary segregation of excess titanium in the samples with y=0.15. In addition, EELS is also used to show that excess titanium is being partially accommodated in the grain interior. Implications for the film electrical and dielectric properties are outlined.
Original language | English |
---|---|
Pages (from-to) | 119-124 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 574 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States Duration: Apr 6 1999 → Apr 8 1999 |