Microstructure and nonstoichiometry of barium strontium titanate thin films for dram applications

S. Stemmer, S. K. Streiffer, N. D. Browning, A. I. Kingon

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper we investigate the microstructural accommodation of nonstoichiometry in (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition. Films with three different (Ba+Sr)/Ti ratios of 49/51 (y=0.04 in the notation of the formula above), of 48/52 (y = 0.08) and of 46.5/53.5 (y=0.15), were studied. High-resolution electron microscopy is used to study the microstructure of the BST films. High-spatial resolution electron energy-loss spectroscopy (EELS) is used to reveal changes in chemistry and local atomic environment both at grain boundaries and within grains as a function of titanium excess. We find an amorphous phase at the grain boundaries and grain boundary segregation of excess titanium in the samples with y=0.15. In addition, EELS is also used to show that excess titanium is being partially accommodated in the grain interior. Implications for the film electrical and dielectric properties are outlined.

Original languageEnglish
Pages (from-to)119-124
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume574
DOIs
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium BB: 'Multicomponent Oxide Films for Electronics' - San Francisco, CA, United States
Duration: Apr 6 1999Apr 8 1999

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