Abstract
SrBi2Nb2O9 (and in some cases SrBi2Ta2O9) epitaxial thin films were deposited on (001), (110), and (111) SrTiO3 substrates by pulsed laser deposition (PLD), both with and without epitaxial SrRuO3 bottom electrodes. Films grow epitaxially with the c-axis inclined by 0° 45°, and 57° from the substrate surface normal, respectively. Greater tilts of the c-axis into the plane of the substrate surface provide a greater component of the polar axis (the a-axis of the orthorhombic unit cell) perpendicular to the substrate surface, leading to increased remanent polarization (Pr) values. Portions of the same films used for electrical characterization were examined by transmission electron microscopy (TEM). Films have a single c-axis tilt angle and are fully crystalline with no observable second-phase inclusions. All films are observed to have a high density of out-of-phase boundaries (OPBs).
Original language | English |
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Pages (from-to) | 27-37 |
Number of pages | 11 |
Journal | Integrated Ferroelectrics |
Volume | 33 |
Issue number | 1-4 |
DOIs | |
State | Published - 2001 |
Externally published | Yes |
Event | 12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: Mar 12 2000 → Mar 15 2000 |
Funding
We gratefully acknowledge the financial support of the U.S. Department of Energy through grant DE-FG02-97ER45638 for the work performed at Penn State and contract W-31-109-ENG-38 for the work performed at Rrgonne National Laboratory (ANL). In addition, we acknowledge the ANL Electron Microscopy Center, the University of Michigan at Ann Arbor Electron Microbeam Analysis Laboratory. and the Pennsylvania State University Materials Characterization Laboratory for use of their microscopy facilities.
Keywords
- Epitaxial growth
- Microstructure of SrBiNbO
- Microstructure of SrBiTaO
- Out-of-phase boundaries (OPBs)
- SrBi TaO
- SrBiNbO
- Transmission electron microscopy (TEM)