Abstract
Microstructural development in chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and self-ion irradiation at elevated temperatures was studied. The CVD SiC samples were examined by transmission electron microscopy following neutron irradiation to 4.5-7.7 × 1025 n/m2 (E > 0.1 MeV) at 300 and 800 °C and 5.1 MeV Si2+ ion irradiation up to ∼200 dpa at 600-1400 °C. The evolution of various irradiation-produced defects including black spot defects, dislocation loops, network dislocations, and cavities was characterized as a function of irradiation temperature and fluence. It was demonstrated that the black spot defects and small dislocation loops continue to dominate at relatively low temperatures (<∼800 °C), whereas they grow into Frank faulted loops and finally develop into dislocation networks at a higher temperature (1400 °C). Substantial cavity formation on grain boundaries and stacking faults was confirmed after ion irradiation at 1400 °C. These observations were discussed in relation with the known irradiation phenomena in SiC, such as low temperature swelling and cavity swelling.
Original language | English |
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Pages (from-to) | 228-240 |
Number of pages | 13 |
Journal | Journal of Nuclear Materials |
Volume | 351 |
Issue number | 1-3 |
DOIs | |
State | Published - Jun 1 2006 |
Funding
This research was sponsored by the Office of Fusion Energy Sciences, US Department of Energy under contract DE-AC05-00OR22725 with UT-Battelle, LLC, the ‘JUPITER-II’ US-Department of Energy/Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT) collaboration for fusion material system research, and the IVNET GFR Program supported by MEXT, Japan.
Funders | Funder number |
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US-Department of Energy/Japanese Ministry of Education, Culture, Sports, Science and Technology | |
U.S. Department of Energy | DE-AC05-00OR22725 |
Fusion Energy Sciences | |
Ministry of Education, Culture, Sports, Science and Technology |
Keywords
- I0400
- N0100
- R0200
- S0400
- S1500