Microstructural characterization of a creep-deformed SiC whisker-reinforced Si3N4

K. L. More, D. A. Koester, R. F. Davis

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5 Scopus citations

Abstract

Constant compressive stress-creep experiments have been conducted in the temperature and stress ranges of 1470-1720 K and 50-350 MPa, respectively, on a 30 vol% SiC whisker-reinforced Si3N4 composite containing sintering aids of 1.5 wt% Al2O3 and 6.0 wt% Y2O3. This work focuses on two independent creep experiments conducted at 1470 and 1620 K, both in the stress range 50-350 MPa. At 1620 K, the stress exponent, n, exhibited a bilinear behavior with n<1 in the low-stress regime and n>1 in the high-stress regime. This behavior was not observed at 1470 K. Various electron microscopy and X-ray diffraction techniques have been used to completely characterize the microstructure of the as-received, annealed, and crept materials. Transmission electron microscopy observations on samples taken before and after the change in n at 1620 K were compared to observations on material crept at 1470 K to clarify the microstructural phenomena controlling the break in the creep curve. Interfaces between Si3N4 grains and the whisker reinforcement were examined using high-resolution electron microscopy. The relationships between observed microstructural changes and high-temperature mechanical properties are presented.

Original languageEnglish
Pages (from-to)263-278
Number of pages16
JournalUltramicroscopy
Volume37
Issue number1-4
DOIs
StatePublished - Aug 1991
Externally publishedYes

Funding

This work was funded as part of the CTAHE project of the Advanced Materials Development Program andp artially performed in the HTML User Facility, both sponsorebdy the US Department of Energy, Assistant Secretaryf or Conservation and RenewablEen ergy,Office of Transportation Technologies, under contract DE-AC05-OR21400 managedb y Martin Marietta Energy Systems, Inc.

FundersFunder number
Office of Transportation TechnologiesDE-AC05-OR21400
US Department of Energy

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