Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Anne A. Campbell; Wallace D. Porter; Yutai Katoh; Lance L. Snead

doi:10.1016/j.nimb.2016.01.005

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Anne A. Campbell, Wallace D. Porter, Yutai Katoh, Lance L. Snead

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

Original language	English
Pages (from-to)	49-58
Number of pages	10
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	370
DOIs	https://doi.org/10.1016/j.nimb.2016.01.005
State	Published - Mar 1 2016

Funding

A special thank you is extended to K.B. Campbell for assistance with implementation of the computer program in R; L.M. Garrison, K.G. Fields, T. Koyanagi, and S.A. Briggs for their assistance in beta testing of the analysis computer program; and Ashli M. Clark for performing the Anter dilatometry measurements. This research work was sponsored by the U.S. Department of Energy, through the Office of Nuclear Energy, Science, and Technology’s Fuel Cycle Research and Development Program and the Office of Fusion Energy Sciences .

Keywords

Annealing
Dilatometry
Passive irradiation temperature monitor
Silicon carbide

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10.1016/j.nimb.2016.01.005

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title = "Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature",

abstract = "Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.",

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author = "Campbell, {Anne A.} and Porter, {Wallace D.} and Yutai Katoh and Snead, {Lance L.}",

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doi = "10.1016/j.nimb.2016.01.005",

language = "English",

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Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature. / Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 370, 01.03.2016, p. 49-58.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

AU - Campbell, Anne A.

AU - Porter, Wallace D.

AU - Katoh, Yutai

AU - Snead, Lance L.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

AB - Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. This method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

KW - Annealing

KW - Dilatometry

KW - Passive irradiation temperature monitor

KW - Silicon carbide

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

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