@inproceedings{b71b60deca644011ab397aba5b44eb7d,
title = "Metal-oxide interfaces in 2 ND generation HTS wires: Mechanism of epitaxial growth of oxide films mediated by a sulfur superstructure",
abstract = "Metal-oxide interfaces are of great interest in a variety of applications including gate oxide layers in the semiconductor industry and high-temperature superconductor-based coated conductors in the field of high power electrical applications. For the latter application highly oriented oxide buffer layers compatible with HTS materials have to be deposited on a flexible metal tape. The maximum superconducting current that a RABiTS tape can carry is strongly dependent on the degree of epitaxy of the buffer layers, and the structural and chemical stability of the metal/oxide interface. The epitaxial growth of the first buffer layer on the metal is a sensitive step that requires the pre-formation of a c (2×2) superstructure on the metal surface, which is provided by segregation or adsorption of sulfur. We will present the details of formation of the S superstructure on Ni and Pd metal surfaces and its influence on the nucleation of entire classes of oxide films.",
author = "C. Cantoni and Christen, {D. K.} and A. Goyal and L. Heatherly and List, {F. A.} and Specht, {E. D.} and M. Varela and Pennycook, {S. J.}",
year = "2006",
language = "English",
isbn = "156677425X",
series = "Proceedings - Electrochemical Society",
pages = "53--64",
booktitle = "Interfaces in Electronic Materials - Proceedings of the International Symposium",
note = "204th Electrochemical Society Fall Meeting ; Conference date: 12-10-2003 Through 16-10-2003",
}