Memory window of highly c-axis oriented ferroelectric YMnO3 thin films

Ho Nyung Lee; Yong Tae Kim; Young K. Park

doi:10.1063/1.124213

Memory window of highly c-axis oriented ferroelectric YMnO₃ thin films

Ho Nyung Lee
, Yong Tae Kim
, Young K. Park

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

YMnO₃ thin films sputtered on Y₂O₃/Si can be crystallized along the c axis after annealing at 870 °C for 20 min. In the oxygen reactive ambient, more than 10% of the excess Y₂O₃ can be produced rather than Mn₂O₃. This excess Y₂O₃ can suppress the c-axis oriented crystallization even though the annealing process is accomplished at 870 °C.

Original language	English
Pages (from-to)	3887-3889
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	25
DOIs	https://doi.org/10.1063/1.124213
State	Published - Jun 21 1999
Externally published	Yes

Access to Document

10.1063/1.124213

Cite this

@article{73de367bf4e646b4a03416c4cc21a977,

title = "Memory window of highly c-axis oriented ferroelectric YMnO3 thin films",

abstract = "YMnO3 thin films sputtered on Y2O3/Si can be crystallized along the c axis after annealing at 870 °C for 20 min. In the oxygen reactive ambient, more than 10\% of the excess Y2O3 can be produced rather than Mn2O3. This excess Y2O3 can suppress the c-axis oriented crystallization even though the annealing process is accomplished at 870 °C.",

author = "Lee, \{Ho Nyung\} and Kim, \{Yong Tae\} and Park, \{Young K.\}",

year = "1999",

month = jun,

day = "21",

doi = "10.1063/1.124213",

language = "English",

volume = "74",

pages = "3887--3889",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Memory window of highly c-axis oriented ferroelectric YMnO3 thin films

AU - Lee, Ho Nyung

AU - Kim, Yong Tae

AU - Park, Young K.

PY - 1999/6/21

Y1 - 1999/6/21

N2 - YMnO3 thin films sputtered on Y2O3/Si can be crystallized along the c axis after annealing at 870 °C for 20 min. In the oxygen reactive ambient, more than 10% of the excess Y2O3 can be produced rather than Mn2O3. This excess Y2O3 can suppress the c-axis oriented crystallization even though the annealing process is accomplished at 870 °C.

AB - YMnO3 thin films sputtered on Y2O3/Si can be crystallized along the c axis after annealing at 870 °C for 20 min. In the oxygen reactive ambient, more than 10% of the excess Y2O3 can be produced rather than Mn2O3. This excess Y2O3 can suppress the c-axis oriented crystallization even though the annealing process is accomplished at 870 °C.

UR - https://www.scopus.com/pages/publications/0032606737

U2 - 10.1063/1.124213

DO - 10.1063/1.124213

M3 - Article

AN - SCOPUS:0032606737

SN - 0003-6951

VL - 74

SP - 3887

EP - 3889

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Memory window of highly c-axis oriented ferroelectric YMnO₃ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this