Melt depth and regrowth kinetics in pulsed laser annealing of silicon and gallium arsenide

G. J. Galvin; Michael O. Thompson; J. W. Mayer

doi:10.1117/12.934946

Melt depth and regrowth kinetics in pulsed laser annealing of silicon and gallium arsenide

G. J. Galvin
, Michael O. Thompson
, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

Abstract

High intensity pulsed laser irradiation of semiconductor materials results in ultrafast melting and resolidification of a thin surface layer. An experimental probe has been develooed based on the discontinuous change in electrical conductivity of a semiconductor material upon melting. Real time monitoring of the dynamics of pulsed laser melting and resolidification can be obtained by transient electrical conductance measurements. Melting velocities from 5 to 200 m/s and resolidification velocities of 1 to 20 m/s have been observed in silicon with this technique. Simultaneous measurement of the optical reflectance provides additional complementary information on laser melting dynamics. Data from both electrical conductance and optical reflectance measurements are presented for silicon and gallium arsenide. The real time experimental data provide strong evidence for a simple thermal model for melting and resolidification during nanosecond pulsed laser annealing.

Original language	English
Pages (from-to)	38-45
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	385
DOIs	https://doi.org/10.1117/12.934946
State	Published - Aug 9 1983
Externally published	Yes

Access to Document

10.1117/12.934946

Cite this

@article{49285e8781ce43c9b104b0ff10703718,

title = "Melt depth and regrowth kinetics in pulsed laser annealing of silicon and gallium arsenide",

abstract = "High intensity pulsed laser irradiation of semiconductor materials results in ultrafast melting and resolidification of a thin surface layer. An experimental probe has been develooed based on the discontinuous change in electrical conductivity of a semiconductor material upon melting. Real time monitoring of the dynamics of pulsed laser melting and resolidification can be obtained by transient electrical conductance measurements. Melting velocities from 5 to 200 m/s and resolidification velocities of 1 to 20 m/s have been observed in silicon with this technique. Simultaneous measurement of the optical reflectance provides additional complementary information on laser melting dynamics. Data from both electrical conductance and optical reflectance measurements are presented for silicon and gallium arsenide. The real time experimental data provide strong evidence for a simple thermal model for melting and resolidification during nanosecond pulsed laser annealing.",

author = "Galvin, \{G. J.\} and Thompson, \{Michael O.\} and Mayer, \{J. W.\}",

year = "1983",

month = aug,

day = "9",

doi = "10.1117/12.934946",

language = "English",

volume = "385",

pages = "38--45",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - JOUR

T1 - Melt depth and regrowth kinetics in pulsed laser annealing of silicon and gallium arsenide

AU - Galvin, G. J.

AU - Thompson, Michael O.

AU - Mayer, J. W.

PY - 1983/8/9

Y1 - 1983/8/9

N2 - High intensity pulsed laser irradiation of semiconductor materials results in ultrafast melting and resolidification of a thin surface layer. An experimental probe has been develooed based on the discontinuous change in electrical conductivity of a semiconductor material upon melting. Real time monitoring of the dynamics of pulsed laser melting and resolidification can be obtained by transient electrical conductance measurements. Melting velocities from 5 to 200 m/s and resolidification velocities of 1 to 20 m/s have been observed in silicon with this technique. Simultaneous measurement of the optical reflectance provides additional complementary information on laser melting dynamics. Data from both electrical conductance and optical reflectance measurements are presented for silicon and gallium arsenide. The real time experimental data provide strong evidence for a simple thermal model for melting and resolidification during nanosecond pulsed laser annealing.

AB - High intensity pulsed laser irradiation of semiconductor materials results in ultrafast melting and resolidification of a thin surface layer. An experimental probe has been develooed based on the discontinuous change in electrical conductivity of a semiconductor material upon melting. Real time monitoring of the dynamics of pulsed laser melting and resolidification can be obtained by transient electrical conductance measurements. Melting velocities from 5 to 200 m/s and resolidification velocities of 1 to 20 m/s have been observed in silicon with this technique. Simultaneous measurement of the optical reflectance provides additional complementary information on laser melting dynamics. Data from both electrical conductance and optical reflectance measurements are presented for silicon and gallium arsenide. The real time experimental data provide strong evidence for a simple thermal model for melting and resolidification during nanosecond pulsed laser annealing.

UR - https://www.scopus.com/pages/publications/0020886692

U2 - 10.1117/12.934946

DO - 10.1117/12.934946

M3 - Article

AN - SCOPUS:0020886692

SN - 0277-786X

VL - 385

SP - 38

EP - 45

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Melt depth and regrowth kinetics in pulsed laser annealing of silicon and gallium arsenide

Abstract

Access to Document

Other files and links

Fingerprint

Cite this