Mechanistically Informed Strategies for Site-Selective Atomic Layer Deposition

Jessica C. Jones, Ethan P. Kamphaus, Lei Cheng, Cong Liu, Alex B.F. Martinson, Adam S. Hock

Research output: Contribution to journalReview articlepeer-review

Abstract

While atomic layer deposition (ALD) processes from across the periodic table have been designed to deposit conformal thin films, an atomistic view of disparate substrate sites reveals the possibility of even greater synthetic control and precision. An understanding of the mechanism by which a particular ALD precursor reacts (or does not react) at myriad surface sites remains in its infancy. In this Perspective, we summarize site-specific chemical reaction strategies that utilize ALD precursors and tailored surface chemistry to discriminate among potential deposition sites as well as describe techniques and tools that can be used to investigate site-selective ALD (SS-ALD). The Perspective is focused on the science of site-selective vapor?phase surface reactions but inevitably reveals the potential utility of such surface synthetic precision.

Original languageEnglish
Pages (from-to)9065-9074
Number of pages10
JournalChemistry of Materials
Volume36
Issue number19
DOIs
StatePublished - Oct 8 2024
Externally publishedYes

Funding

This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.

FundersFunder number
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Division of Materials Sciences and Engineering

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