Mechanisms of strain induced roughening and dislocation multiplication in SixGe1-x thin films

D. E. Jesson; K. M. Chen; S. J. Pennycook; T. Thundat; R. J. Warmack

doi:10.1007/s11664-997-0241-2

Mechanisms of strain induced roughening and dislocation multiplication in Si_xGe_1-x thin films

D. E. Jesson
, K. M. Chen
, S. J. Pennycook
, T. Thundat
, R. J. Warmack

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We discuss the stress driven roughening transition of Si_xGe_1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.

Original language	English
Pages (from-to)	1039-1047
Number of pages	9
Journal	Journal of Electronic Materials
Volume	26
Issue number	9
DOIs	https://doi.org/10.1007/s11664-997-0241-2
State	Published - Sep 1997

Funding

This research was sponsored by the Division of Materials Science, U.S. Department of Energy, under Contract No. DE-AC05-84OR21400 with Lockheed Martin Energy Systems, Inc. We would like to acknowledge the invaluable contributions of J.-M. Baribeau and D.C. Houghton of the National Research Council, Canada 9

Keywords

Heteroepitaxy
Interface roughening
SiGe

Access to Document

10.1007/s11664-997-0241-2

Cite this

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title = "Mechanisms of strain induced roughening and dislocation multiplication in SixGe1-x thin films",

abstract = "We discuss the stress driven roughening transition of SixGe1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.",

keywords = "Heteroepitaxy, Interface roughening, SiGe",

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AU - Jesson, D. E.

AU - Chen, K. M.

AU - Pennycook, S. J.

AU - Thundat, T.

AU - Warmack, R. J.

PY - 1997/9

Y1 - 1997/9

N2 - We discuss the stress driven roughening transition of SixGe1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.

AB - We discuss the stress driven roughening transition of SixGe1-x thin films. In the case of annealed films, nucleation effects dominate the nature of the surface ripple which formed by a cooperative nucleation mechanism. Individual islands appear to nucleate via multilayer fluctuations. Faceting can however be suppressed at high supersaturations, resulting in a transition with characteristics of the Asaro-Tiller-Grinfeld instability. The relationship between morphological evolution and dislocation nucleation and multiplication is considered.

KW - Heteroepitaxy

KW - Interface roughening

KW - SiGe

UR - https://www.scopus.com/pages/publications/0042275700

U2 - 10.1007/s11664-997-0241-2

DO - 10.1007/s11664-997-0241-2

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